Level set approach to simulation of feature profile evolution in a high-density plasma-etching system

Y. H. Im; Y. B. Hahn; S. J. Pearton

doi:10.1116/1.1370174

Level set approach to simulation of feature profile evolution in a high-density plasma-etching system

Y. H. Im
, Y. B. Hahn^*
, S. J. Pearton

^*Corresponding author for this work

Division of Chemical Engineering

Research output: Contribution to journal › Conference article › peer-review

13 Scopus citations

Abstract

A level-set technique was used to analyze the feature profile evolution in high-density plasma-etching processes. The etching of silicon in inductively coupled plasma of Cl₂ and CF₄ was studied under various conditions. The sheath dynamics, angular distribution of ions and reemission of neutrals were included in the trench, etch kinetics and a level-set equation for tracking a moving front of the feature profile. A slight bowing on the sidewalls and substantial tapering near the bottom were observed which depended on the plasma parameters.

Original language	English
Pages (from-to)	701-710
Number of pages	10
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	19
Issue number	3
DOIs	https://doi.org/10.1116/1.1370174
State	Published - 2001.05
Event	13th International Vaccum Microelectronics Conference - Guangzhou, China Duration: 2000.08.14 → 2000.08.17

Quacquarelli Symonds(QS) Subject Topics

Engineering - Electrical & Electronic
Engineering - Petroleum
Physics & Astronomy

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title = "Level set approach to simulation of feature profile evolution in a high-density plasma-etching system",

abstract = "A level-set technique was used to analyze the feature profile evolution in high-density plasma-etching processes. The etching of silicon in inductively coupled plasma of Cl2 and CF4 was studied under various conditions. The sheath dynamics, angular distribution of ions and reemission of neutrals were included in the trench, etch kinetics and a level-set equation for tracking a moving front of the feature profile. A slight bowing on the sidewalls and substantial tapering near the bottom were observed which depended on the plasma parameters.",

author = "Im, \{Y. H.\} and Hahn, \{Y. B.\} and Pearton, \{S. J.\}",

year = "2001",

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doi = "10.1116/1.1370174",

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pages = "701--710",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

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AU - Im, Y. H.

AU - Hahn, Y. B.

AU - Pearton, S. J.

PY - 2001/5

Y1 - 2001/5

N2 - A level-set technique was used to analyze the feature profile evolution in high-density plasma-etching processes. The etching of silicon in inductively coupled plasma of Cl2 and CF4 was studied under various conditions. The sheath dynamics, angular distribution of ions and reemission of neutrals were included in the trench, etch kinetics and a level-set equation for tracking a moving front of the feature profile. A slight bowing on the sidewalls and substantial tapering near the bottom were observed which depended on the plasma parameters.

AB - A level-set technique was used to analyze the feature profile evolution in high-density plasma-etching processes. The etching of silicon in inductively coupled plasma of Cl2 and CF4 was studied under various conditions. The sheath dynamics, angular distribution of ions and reemission of neutrals were included in the trench, etch kinetics and a level-set equation for tracking a moving front of the feature profile. A slight bowing on the sidewalls and substantial tapering near the bottom were observed which depended on the plasma parameters.

UR - https://www.scopus.com/pages/publications/0035326288

U2 - 10.1116/1.1370174

DO - 10.1116/1.1370174

M3 - Conference article

AN - SCOPUS:0035326288

SN - 1071-1023

VL - 19

SP - 701

EP - 710

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

T2 - 13th International Vaccum Microelectronics Conference

Y2 - 14 August 2000 through 17 August 2000

ER -

Level set approach to simulation of feature profile evolution in a high-density plasma-etching system

Abstract

Quacquarelli Symonds(QS) Subject Topics

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