Skip to main navigation Skip to search Skip to main content

Light-extraction enhancement of vertical-injection GaN-based light-emitting diodes fabricated with highly integrated surface textures

  • H. Kim*
  • , K. K. Choi
  • , K. K. Kim
  • , J. Cho
  • , S. N. Lee
  • , Y. Park
  • , J. S. Kwak
  • , T. Y. Seong
  • *Corresponding author for this work
  • Samsung
  • Sunchon National University
  • Korea University

Research output: Contribution to journalJournal articlepeer-review

Abstract

We report on the fabrication of high-efficiency vertical-injection GaN-based light-emitting diodes (LEDs) fabricated with integrated surface textures. An optical ray-tracing simulation shows that the high integration of surface textures can effectively enhance the light-extraction efficiency. The integrated surface textures are fabricated on the top surface of LEDs by generating hexagonal cones on the periodically corrugated surfaces of Ti-GaN. Compared to reference LEDs without textures, LEDs fabricated with integrated surface textures show an enhancement of the output power by a factor of 2.59, which is in agreement with the calculated results.

Original languageEnglish
Pages (from-to)1273-1275
Number of pages3
JournalOptics Letters
Volume33
Issue number11
DOIs
StatePublished - 2008.06.1

Fingerprint

Dive into the research topics of 'Light-extraction enhancement of vertical-injection GaN-based light-emitting diodes fabricated with highly integrated surface textures'. Together they form a unique fingerprint.

Cite this