Abstract
We compare local carrier dynamics in n-CdS / p-CdTe solar cells, where the electron-hole pairs are generated by either near-field optical illumination or highly focused electron beam excitation. An ion beam milling process was used to prepare a smooth surface of cross-sectional devices. The spatially resolved photocurrent images confirm high carrier collection efficiency at grain boundaries. An analytical model was used to extract material parameters at the level of single grains. We find that the minority carrier diffusion lengths extracted from both local measurements are in excellent agreement, but are smaller than the values determined from macro-scale measurements.
| Original language | English |
|---|---|
| Title of host publication | 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9781479979448 |
| DOIs | |
| State | Published - 2015.12.14 |
| Event | 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: 2015.06.14 → 2015.06.19 |
Publication series
| Name | 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 |
|---|
Conference
| Conference | 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 |
|---|---|
| Country/Territory | United States |
| City | New Orleans |
| Period | 15.06.14 → 15.06.19 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Keywords
- cadmium telluride
- electron beam induced current
- grain boundary
- near-field optical microscopy
- solar cell
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