Local Structural Properties in the Terahertz Semiconductor Zn 1-xCdxTe

Sang Wook Han

doi:10.1143/jjap.42.6303

Local Structural Properties in the Terahertz Semiconductor Zn _1-xCd_xTe

Sang Wook Han^*

^*Corresponding author for this work

Physics Education

Lawrence Berkeley National Laboratory

Research output: Contribution to journal › Journal article › peer-review

9 Scopus citations

Abstract

Local structural properties of wide-band-gap semiconductors, Zn _1-xCd_xTe (ZCT) crystals (x = 0-0.25), were studied using X-ray absorption fine structure (XAFS) measurements at the Te L₁ - and Zn K-edges. A previous study by Liu et al.¹⁾ reported that ZCT emits or absorbs terahertz (THz) signals with a best efficiency when x ≃ 0.05. The XAFS studies show that the disorder and the bond length of Te-Zn pairs have maximum values at about x = 0.05. We discuss that these structural transitions are relevant to the efficiency of THz emission and absorption in ZCT crystals. We also find that the distance of Te-Cd pairs is at least ∼0. 2 Å longer than that of Te-Zn pairs and that Cd doping causes disorder/distortion in both Te and Zn sites in the crystals.

Original language	English
Pages (from-to)	6303-6307
Number of pages	5
Journal	Japanese Journal of Applied Physics
Volume	42
Issue number	10
DOIs	https://doi.org/10.1143/jjap.42.6303
State	Published - 2003.10

Keywords

Disorder
Local structure
Semiconductor
Terahertz
XAFS
ZnCdTe

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title = "Local Structural Properties in the Terahertz Semiconductor Zn 1-xCdxTe",

abstract = "Local structural properties of wide-band-gap semiconductors, Zn 1-xCdxTe (ZCT) crystals (x = 0-0.25), were studied using X-ray absorption fine structure (XAFS) measurements at the Te L1 - and Zn K-edges. A previous study by Liu et al.1) reported that ZCT emits or absorbs terahertz (THz) signals with a best efficiency when x ≃ 0.05. The XAFS studies show that the disorder and the bond length of Te-Zn pairs have maximum values at about x = 0.05. We discuss that these structural transitions are relevant to the efficiency of THz emission and absorption in ZCT crystals. We also find that the distance of Te-Cd pairs is at least ∼0. 2 {\AA} longer than that of Te-Zn pairs and that Cd doping causes disorder/distortion in both Te and Zn sites in the crystals.",

keywords = "Disorder, Local structure, Semiconductor, Terahertz, XAFS, ZnCdTe",

author = "Han, \{Sang Wook\}",

year = "2003",

month = oct,

doi = "10.1143/jjap.42.6303",

language = "English",

volume = "42",

pages = "6303--6307",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

number = "10",

}

TY - JOUR

T1 - Local Structural Properties in the Terahertz Semiconductor Zn 1-xCdxTe

AU - Han, Sang Wook

PY - 2003/10

Y1 - 2003/10

N2 - Local structural properties of wide-band-gap semiconductors, Zn 1-xCdxTe (ZCT) crystals (x = 0-0.25), were studied using X-ray absorption fine structure (XAFS) measurements at the Te L1 - and Zn K-edges. A previous study by Liu et al.1) reported that ZCT emits or absorbs terahertz (THz) signals with a best efficiency when x ≃ 0.05. The XAFS studies show that the disorder and the bond length of Te-Zn pairs have maximum values at about x = 0.05. We discuss that these structural transitions are relevant to the efficiency of THz emission and absorption in ZCT crystals. We also find that the distance of Te-Cd pairs is at least ∼0. 2 Å longer than that of Te-Zn pairs and that Cd doping causes disorder/distortion in both Te and Zn sites in the crystals.

AB - Local structural properties of wide-band-gap semiconductors, Zn 1-xCdxTe (ZCT) crystals (x = 0-0.25), were studied using X-ray absorption fine structure (XAFS) measurements at the Te L1 - and Zn K-edges. A previous study by Liu et al.1) reported that ZCT emits or absorbs terahertz (THz) signals with a best efficiency when x ≃ 0.05. The XAFS studies show that the disorder and the bond length of Te-Zn pairs have maximum values at about x = 0.05. We discuss that these structural transitions are relevant to the efficiency of THz emission and absorption in ZCT crystals. We also find that the distance of Te-Cd pairs is at least ∼0. 2 Å longer than that of Te-Zn pairs and that Cd doping causes disorder/distortion in both Te and Zn sites in the crystals.

KW - Disorder

KW - Local structure

KW - Semiconductor

KW - Terahertz

KW - XAFS

KW - ZnCdTe

UR - https://www.scopus.com/pages/publications/0347590776

U2 - 10.1143/jjap.42.6303

DO - 10.1143/jjap.42.6303

M3 - Journal article

AN - SCOPUS:0347590776

SN - 0021-4922

VL - 42

SP - 6303

EP - 6307

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 10

ER -

Local Structural Properties in the Terahertz Semiconductor Zn _1-xCd_xTe

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Keywords

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