Local structure and conduction mechanism in amorphous In-Ga-Zn-O films

Deok Yong Cho; Jaewon Song; Kwang Duk Na; Cheol Seong Hwang; Jong Han Jeong; Jae Kyeong Jeong; Yeon Gon Mo

doi:10.1063/1.3103323

Local structure and conduction mechanism in amorphous In-Ga-Zn-O films

Deok Yong Cho^*
, Jaewon Song
, Kwang Duk Na
, Cheol Seong Hwang
, Jong Han Jeong
, Jae Kyeong Jeong
, Yeon Gon Mo

^*Corresponding author for this work

Department of Physics

Seoul National University
Samsung
Inha University

Research output: Contribution to journal › Journal article › peer-review

69 Scopus citations

Abstract

The local structures of amorphous In-Ga-Zn-O (InGaZnO₄ and In₂ Ga₂ ZnO₇) films were examined by x-ray absorption spectroscopy and fine structure analysis. The local metal-oxygen coordination in both films indicated bipyramidal GaO₅, ZnO ₅, and trigonal InO₆ clusters. Further analyses showed splitting of the Zn-O bond length suggesting distortion of the ZnO₅ cluster, which evidenced the existence of localized holes in the Zn atoms. In combination with the abundance of In 5s electrons, this shows that the In-Zn hopping interactions contribute to electrical conduction.

Original language	English
Article number	112112
Journal	Applied Physics Letters
Volume	94
Issue number	11
DOIs	https://doi.org/10.1063/1.3103323
State	Published - 2009

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@article{5567da89af294daa8465267f46cfdd59,

title = "Local structure and conduction mechanism in amorphous In-Ga-Zn-O films",

abstract = "The local structures of amorphous In-Ga-Zn-O (InGaZnO4 and In2 Ga2 ZnO7) films were examined by x-ray absorption spectroscopy and fine structure analysis. The local metal-oxygen coordination in both films indicated bipyramidal GaO5, ZnO 5, and trigonal InO6 clusters. Further analyses showed splitting of the Zn-O bond length suggesting distortion of the ZnO5 cluster, which evidenced the existence of localized holes in the Zn atoms. In combination with the abundance of In 5s electrons, this shows that the In-Zn hopping interactions contribute to electrical conduction.",

author = "Cho, \{Deok Yong\} and Jaewon Song and Na, \{Kwang Duk\} and Hwang, \{Cheol Seong\} and Jeong, \{Jong Han\} and Jeong, \{Jae Kyeong\} and Mo, \{Yeon Gon\}",

year = "2009",

doi = "10.1063/1.3103323",

language = "English",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "11",

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TY - JOUR

T1 - Local structure and conduction mechanism in amorphous In-Ga-Zn-O films

AU - Cho, Deok Yong

AU - Song, Jaewon

AU - Na, Kwang Duk

AU - Hwang, Cheol Seong

AU - Jeong, Jong Han

AU - Jeong, Jae Kyeong

AU - Mo, Yeon Gon

PY - 2009

Y1 - 2009

N2 - The local structures of amorphous In-Ga-Zn-O (InGaZnO4 and In2 Ga2 ZnO7) films were examined by x-ray absorption spectroscopy and fine structure analysis. The local metal-oxygen coordination in both films indicated bipyramidal GaO5, ZnO 5, and trigonal InO6 clusters. Further analyses showed splitting of the Zn-O bond length suggesting distortion of the ZnO5 cluster, which evidenced the existence of localized holes in the Zn atoms. In combination with the abundance of In 5s electrons, this shows that the In-Zn hopping interactions contribute to electrical conduction.

AB - The local structures of amorphous In-Ga-Zn-O (InGaZnO4 and In2 Ga2 ZnO7) films were examined by x-ray absorption spectroscopy and fine structure analysis. The local metal-oxygen coordination in both films indicated bipyramidal GaO5, ZnO 5, and trigonal InO6 clusters. Further analyses showed splitting of the Zn-O bond length suggesting distortion of the ZnO5 cluster, which evidenced the existence of localized holes in the Zn atoms. In combination with the abundance of In 5s electrons, this shows that the In-Zn hopping interactions contribute to electrical conduction.

UR - https://www.scopus.com/pages/publications/63049104093

U2 - 10.1063/1.3103323

DO - 10.1063/1.3103323

M3 - Journal article

AN - SCOPUS:63049104093

SN - 0003-6951

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 112112

ER -

Local structure and conduction mechanism in amorphous In-Ga-Zn-O films

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