Low-frequency noise characterization of positive bias stress effect on the spatial distribution of trap in β-Ga2O3 FinFET

Hagyoul Bae; Geon Bum Lee; Jaewook Yoo; Khwang Sun Lee; Ja Yun Ku; Kihyun Kim; Jungsik Kim; Peide D. Ye; Jun Young Park; Yang Kyu Choi

doi:10.1016/j.sse.2024.108882

Low-frequency noise characterization of positive bias stress effect on the spatial distribution of trap in β-Ga₂O₃ FinFET

Hagyoul Bae
, Geon Bum Lee
, Jaewook Yoo
, Khwang Sun Lee
, Ja Yun Ku
, Kihyun Kim
, Jungsik Kim
, Peide D. Ye
, Jun Young Park^*
, Yang Kyu Choi

^*Corresponding author for this work

Division of Electronic Engineering

Korea Advanced Institute of Science and Technology
Jeonbuk National University
Chungbuk National University
Gyeongsang National University
Purdue University

Research output: Contribution to journal › Journal article › peer-review

4 Scopus citations

Abstract

The reliability of a β-Ga₂O₃ thin-film field-effect transistor is investigated under positive-bias stress (PBS). The transistor has a tri-gate structure with a gate dielectric of Al₂O₃. By characterizing low-frequency noise (LFN), the spatial distribution of trap in the gate dielectric was quantitatively extracted. The measured power spectral density (PSD) followed a 1/f-shape due to trapping and de-trapping of the channel carriers to and from the gate dielectric.

Original language	English
Article number	108882
Journal	Solid-State Electronics
Volume	215
DOIs	https://doi.org/10.1016/j.sse.2024.108882
State	Published - 2024.05

Keywords

Carrier number fluctuation
Low-frequency noise
Oxide traps
Power device
Wide bandgap
β-GaO FET

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Engineering - Electrical & Electronic
Engineering - Petroleum
Physics & Astronomy

Access to Document

10.1016/j.sse.2024.108882

Cite this

@article{1b4a5963d0d843b399e1bb8badc42030,

title = "Low-frequency noise characterization of positive bias stress effect on the spatial distribution of trap in β-Ga2O3 FinFET",

abstract = "The reliability of a β-Ga2O3 thin-film field-effect transistor is investigated under positive-bias stress (PBS). The transistor has a tri-gate structure with a gate dielectric of Al2O3. By characterizing low-frequency noise (LFN), the spatial distribution of trap in the gate dielectric was quantitatively extracted. The measured power spectral density (PSD) followed a 1/f-shape due to trapping and de-trapping of the channel carriers to and from the gate dielectric.",

keywords = "Carrier number fluctuation, Low-frequency noise, Oxide traps, Power device, Wide bandgap, β-GaO FET",

author = "Hagyoul Bae and Lee, \{Geon Bum\} and Jaewook Yoo and Lee, \{Khwang Sun\} and Ku, \{Ja Yun\} and Kihyun Kim and Jungsik Kim and Ye, \{Peide D.\} and Park, \{Jun Young\} and Choi, \{Yang Kyu\}",

note = "Publisher Copyright: {\textcopyright} 2024 Elsevier Ltd",

year = "2024",

month = may,

doi = "10.1016/j.sse.2024.108882",

language = "English",

volume = "215",

journal = "Solid-State Electronics",

issn = "0038-1101",

}

TY - JOUR

T1 - Low-frequency noise characterization of positive bias stress effect on the spatial distribution of trap in β-Ga2O3 FinFET

AU - Bae, Hagyoul

AU - Lee, Geon Bum

AU - Yoo, Jaewook

AU - Lee, Khwang Sun

AU - Ku, Ja Yun

AU - Kim, Kihyun

AU - Kim, Jungsik

AU - Ye, Peide D.

AU - Park, Jun Young

AU - Choi, Yang Kyu

PY - 2024/5

Y1 - 2024/5

N2 - The reliability of a β-Ga2O3 thin-film field-effect transistor is investigated under positive-bias stress (PBS). The transistor has a tri-gate structure with a gate dielectric of Al2O3. By characterizing low-frequency noise (LFN), the spatial distribution of trap in the gate dielectric was quantitatively extracted. The measured power spectral density (PSD) followed a 1/f-shape due to trapping and de-trapping of the channel carriers to and from the gate dielectric.

AB - The reliability of a β-Ga2O3 thin-film field-effect transistor is investigated under positive-bias stress (PBS). The transistor has a tri-gate structure with a gate dielectric of Al2O3. By characterizing low-frequency noise (LFN), the spatial distribution of trap in the gate dielectric was quantitatively extracted. The measured power spectral density (PSD) followed a 1/f-shape due to trapping and de-trapping of the channel carriers to and from the gate dielectric.

KW - Carrier number fluctuation

KW - Low-frequency noise

KW - Oxide traps

KW - Power device

KW - Wide bandgap

KW - β-GaO FET

UR - https://www.scopus.com/pages/publications/85186250156

U2 - 10.1016/j.sse.2024.108882

DO - 10.1016/j.sse.2024.108882

M3 - Journal article

AN - SCOPUS:85186250156

SN - 0038-1101

VL - 215

JO - Solid-State Electronics

JF - Solid-State Electronics

M1 - 108882

ER -