Low leakage and high performance of nMOSFET using SiGe layer as a diffusion barrier

Bongki Mheen; Young Joo Song; Jin Young Kang; Kyu Hwan Shim; Songcheol Hong

doi:10.1016/j.mssp.2004.09.013

Low leakage and high performance of nMOSFET using SiGe layer as a diffusion barrier

Bongki Mheen^*
, Young Joo Song
, Jin Young Kang
, Kyu Hwan Shim
, Songcheol Hong

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Electronics and Telecommunications Research Institute
Korea Advanced Institute of Science and Technology

Research output: Contribution to journal › Journal article › peer-review

1 Scopus citations

Abstract

As a boron diffusion barrier, a 20nm-thick Si_0.8Ge_0.2 layer was successfully utilized in n-channel MOSFETs for implementing a retrograded well structure. Compared with the conventional Si CMOS process, the developed n-channel MOSFET process provides an enhanced transconductance (7%) and lower sub-threshold swing which is nearly unchanged even at an increased drain-source voltage. Especially, because sub-threshold leakage current is one of the key issues in the MOS device scaling due to reduced threshold voltage, the usage of a Si_0.8Ge_0.2 layer in n-channel MOSFET was verified to be useful for low power and high performance even under aggressive scaling constraints.

Original language	English
Pages (from-to)	375-378
Number of pages	4
Journal	Materials Science in Semiconductor Processing
Volume	7
Issue number	4-6 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.mssp.2004.09.013
State	Published - 2004

Keywords

DIBL
Drain leakage current
MOSFET
Retrograde
SiGe
Subthreshold swing
Transconductance

Access to Document

10.1016/j.mssp.2004.09.013

Cite this

@article{611f3d4c87ab4a0b900cecbeea8dde5a,

title = "Low leakage and high performance of nMOSFET using SiGe layer as a diffusion barrier",

abstract = "As a boron diffusion barrier, a 20nm-thick Si0.8Ge0.2 layer was successfully utilized in n-channel MOSFETs for implementing a retrograded well structure. Compared with the conventional Si CMOS process, the developed n-channel MOSFET process provides an enhanced transconductance (7\%) and lower sub-threshold swing which is nearly unchanged even at an increased drain-source voltage. Especially, because sub-threshold leakage current is one of the key issues in the MOS device scaling due to reduced threshold voltage, the usage of a Si0.8Ge0.2 layer in n-channel MOSFET was verified to be useful for low power and high performance even under aggressive scaling constraints.",

keywords = "DIBL, Drain leakage current, MOSFET, Retrograde, SiGe, Subthreshold swing, Transconductance",

author = "Bongki Mheen and Song, \{Young Joo\} and Kang, \{Jin Young\} and Shim, \{Kyu Hwan\} and Songcheol Hong",

year = "2004",

doi = "10.1016/j.mssp.2004.09.013",

language = "English",

volume = "7",

pages = "375--378",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

number = "4-6 SPEC. ISS.",

}

TY - JOUR

T1 - Low leakage and high performance of nMOSFET using SiGe layer as a diffusion barrier

AU - Mheen, Bongki

AU - Song, Young Joo

AU - Kang, Jin Young

AU - Shim, Kyu Hwan

AU - Hong, Songcheol

PY - 2004

Y1 - 2004

N2 - As a boron diffusion barrier, a 20nm-thick Si0.8Ge0.2 layer was successfully utilized in n-channel MOSFETs for implementing a retrograded well structure. Compared with the conventional Si CMOS process, the developed n-channel MOSFET process provides an enhanced transconductance (7%) and lower sub-threshold swing which is nearly unchanged even at an increased drain-source voltage. Especially, because sub-threshold leakage current is one of the key issues in the MOS device scaling due to reduced threshold voltage, the usage of a Si0.8Ge0.2 layer in n-channel MOSFET was verified to be useful for low power and high performance even under aggressive scaling constraints.

AB - As a boron diffusion barrier, a 20nm-thick Si0.8Ge0.2 layer was successfully utilized in n-channel MOSFETs for implementing a retrograded well structure. Compared with the conventional Si CMOS process, the developed n-channel MOSFET process provides an enhanced transconductance (7%) and lower sub-threshold swing which is nearly unchanged even at an increased drain-source voltage. Especially, because sub-threshold leakage current is one of the key issues in the MOS device scaling due to reduced threshold voltage, the usage of a Si0.8Ge0.2 layer in n-channel MOSFET was verified to be useful for low power and high performance even under aggressive scaling constraints.

KW - DIBL

KW - Drain leakage current

KW - MOSFET

KW - Retrograde

KW - SiGe

KW - Subthreshold swing

KW - Transconductance

UR - https://www.scopus.com/pages/publications/9544253926

U2 - 10.1016/j.mssp.2004.09.013

DO - 10.1016/j.mssp.2004.09.013

M3 - Journal article

AN - SCOPUS:9544253926

SN - 1369-8001

VL - 7

SP - 375

EP - 378

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 4-6 SPEC. ISS.

ER -

Low leakage and high performance of nMOSFET using SiGe layer as a diffusion barrier

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this