Low melting temperature thin coating of zinc on Si(1 0 0) for diamond film growth

M. A. Dar; S. G. Ansari; H. K. Seo; G. S. Kim; Y. S. Kim; S. K. Kulkarni; H. S. Shin

doi:10.1016/j.carbon.2004.10.029

Low melting temperature thin coating of zinc on Si(1 0 0) for diamond film growth

M. A. Dar
, S. G. Ansari
, H. K. Seo
, G. S. Kim
, Y. S. Kim
, S. K. Kulkarni
, H. S. Shin^*

^*Corresponding author for this work

Division of Chemical Engineering

Research output: Contribution to journal › Journal article › peer-review

1 Scopus citations

Abstract

The growth of a diamond film using low melting point coating of zinc on Si(1 0 0) substrate was investigated. The growth and surface morphology of the film and the substrate were investigated using atomic force microscopy (AFM) and scanning electron microscopy (SEM). The quality of the film was investigated using Raman spectroscopy. The surface roughness of the sample film was 88 nm on silicon. The results show that the quality of the diamond film on the zinc covered surface is better than that directly on the scratched silicon substrate.

Original language	English
Pages (from-to)	858-860
Number of pages	3
Journal	Carbon
Volume	43
Issue number	4
DOIs	https://doi.org/10.1016/j.carbon.2004.10.029
State	Published - 2005

Keywords

A. Diamond
B. Catalyst, Chemical vapor deposition
C. Atomic force microscopy, Raman spectroscopy

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Chemistry

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10.1016/j.carbon.2004.10.029

Cite this

@article{52ec088ffc5a40a89d46c0948852810e,

title = "Low melting temperature thin coating of zinc on Si(1 0 0) for diamond film growth",

abstract = "The growth of a diamond film using low melting point coating of zinc on Si(1 0 0) substrate was investigated. The growth and surface morphology of the film and the substrate were investigated using atomic force microscopy (AFM) and scanning electron microscopy (SEM). The quality of the film was investigated using Raman spectroscopy. The surface roughness of the sample film was 88 nm on silicon. The results show that the quality of the diamond film on the zinc covered surface is better than that directly on the scratched silicon substrate.",

keywords = "A. Diamond, B. Catalyst, Chemical vapor deposition, C. Atomic force microscopy, Raman spectroscopy",

author = "Dar, \{M. A.\} and Ansari, \{S. G.\} and Seo, \{H. K.\} and Kim, \{G. S.\} and Kim, \{Y. S.\} and Kulkarni, \{S. K.\} and Shin, \{H. S.\}",

year = "2005",

doi = "10.1016/j.carbon.2004.10.029",

language = "English",

volume = "43",

pages = "858--860",

journal = "Carbon",

issn = "0008-6223",

number = "4",

}

TY - JOUR

T1 - Low melting temperature thin coating of zinc on Si(1 0 0) for diamond film growth

AU - Dar, M. A.

AU - Ansari, S. G.

AU - Seo, H. K.

AU - Kim, G. S.

AU - Kim, Y. S.

AU - Kulkarni, S. K.

AU - Shin, H. S.

PY - 2005

Y1 - 2005

N2 - The growth of a diamond film using low melting point coating of zinc on Si(1 0 0) substrate was investigated. The growth and surface morphology of the film and the substrate were investigated using atomic force microscopy (AFM) and scanning electron microscopy (SEM). The quality of the film was investigated using Raman spectroscopy. The surface roughness of the sample film was 88 nm on silicon. The results show that the quality of the diamond film on the zinc covered surface is better than that directly on the scratched silicon substrate.

AB - The growth of a diamond film using low melting point coating of zinc on Si(1 0 0) substrate was investigated. The growth and surface morphology of the film and the substrate were investigated using atomic force microscopy (AFM) and scanning electron microscopy (SEM). The quality of the film was investigated using Raman spectroscopy. The surface roughness of the sample film was 88 nm on silicon. The results show that the quality of the diamond film on the zinc covered surface is better than that directly on the scratched silicon substrate.

KW - A. Diamond

KW - B. Catalyst, Chemical vapor deposition

KW - C. Atomic force microscopy, Raman spectroscopy

UR - https://www.scopus.com/pages/publications/13444263672

U2 - 10.1016/j.carbon.2004.10.029

DO - 10.1016/j.carbon.2004.10.029

M3 - Journal article

AN - SCOPUS:13444263672

SN - 0008-6223

VL - 43

SP - 858

EP - 860

JO - Carbon

JF - Carbon

IS - 4

ER -

Low melting temperature thin coating of zinc on Si(1 0 0) for diamond film growth

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

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