Low temperature HFCVD synthesis of tungsten oxide thin film for high response hydrogen gas sensor application

Rhushikesh Godbole; S. Ameen; Umesh T. Nakate; M. Shaheer Akhtar; Hyung Shik Shin

doi:10.1016/j.matlet.2019.07.110

Low temperature HFCVD synthesis of tungsten oxide thin film for high response hydrogen gas sensor application

Rhushikesh Godbole
, S. Ameen^*
, Umesh T. Nakate
, M. Shaheer Akhtar
, Hyung Shik Shin

^*Corresponding author for this work

Jeonbuk National University
Korea Basic Science Institute

Research output: Contribution to journal › Journal article › peer-review

51 Scopus citations

Abstract

A quick and efficient approach was employed for the growth of nanocrystalline tungsten oxide (WO₃) thin films using one-step hot filament chemical vapor deposition (HFCVD) method at low temperature. In a typical experiment, the parent material tungsten (W) was subjected to oxidation, gasification and its subsequent condensation to obtain the uniform deposition of WO₃ thin film on silicon substrate at significantly low temperature of ∼200 °C. Prepared WO₃ thin film possessed the cauliflower nanostructure (WCNs) with typical monoclinic WO₃ crystal structure. Prepared WCNs thin films were applied for the detection of hydrogen (H₂) gas at 100 ppm. H₂ response increased with rise in temperature and the maximum response of ∼87% was obtained at the optimized temperature of ∼250 °C with response time 180 s.

Original language	English
Pages (from-to)	398-401
Number of pages	4
Journal	Materials Letters
Volume	254
DOIs	https://doi.org/10.1016/j.matlet.2019.07.110
State	Published - 2019.11.1

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Hydrogen detection
Low temperature HFCVD
Surfaces
Thin films
WO

Quacquarelli Symonds(QS) Subject Topics

Engineering - Mechanical
Materials Science
Physics & Astronomy

Access to Document

10.1016/j.matlet.2019.07.110

Cite this

@article{f10f26e3338a431a8cd5b5d0e0120ac6,

title = "Low temperature HFCVD synthesis of tungsten oxide thin film for high response hydrogen gas sensor application",

abstract = "A quick and efficient approach was employed for the growth of nanocrystalline tungsten oxide (WO3) thin films using one-step hot filament chemical vapor deposition (HFCVD) method at low temperature. In a typical experiment, the parent material tungsten (W) was subjected to oxidation, gasification and its subsequent condensation to obtain the uniform deposition of WO3 thin film on silicon substrate at significantly low temperature of ∼200 °C. Prepared WO3 thin film possessed the cauliflower nanostructure (WCNs) with typical monoclinic WO3 crystal structure. Prepared WCNs thin films were applied for the detection of hydrogen (H2) gas at 100 ppm. H2 response increased with rise in temperature and the maximum response of ∼87\% was obtained at the optimized temperature of ∼250 °C with response time 180 s.",

keywords = "Hydrogen detection, Low temperature HFCVD, Surfaces, Thin films, WO",

author = "Rhushikesh Godbole and S. Ameen and Nakate, \{Umesh T.\} and \{Shaheer Akhtar\}, M. and Shin, \{Hyung Shik\}",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",

year = "2019",

month = nov,

day = "1",

doi = "10.1016/j.matlet.2019.07.110",

language = "English",

volume = "254",

pages = "398--401",

journal = "Materials Letters",

issn = "0167-577X",

}

TY - JOUR

T1 - Low temperature HFCVD synthesis of tungsten oxide thin film for high response hydrogen gas sensor application

AU - Godbole, Rhushikesh

AU - Ameen, S.

AU - Nakate, Umesh T.

AU - Shaheer Akhtar, M.

AU - Shin, Hyung Shik

PY - 2019/11/1

Y1 - 2019/11/1

N2 - A quick and efficient approach was employed for the growth of nanocrystalline tungsten oxide (WO3) thin films using one-step hot filament chemical vapor deposition (HFCVD) method at low temperature. In a typical experiment, the parent material tungsten (W) was subjected to oxidation, gasification and its subsequent condensation to obtain the uniform deposition of WO3 thin film on silicon substrate at significantly low temperature of ∼200 °C. Prepared WO3 thin film possessed the cauliflower nanostructure (WCNs) with typical monoclinic WO3 crystal structure. Prepared WCNs thin films were applied for the detection of hydrogen (H2) gas at 100 ppm. H2 response increased with rise in temperature and the maximum response of ∼87% was obtained at the optimized temperature of ∼250 °C with response time 180 s.

AB - A quick and efficient approach was employed for the growth of nanocrystalline tungsten oxide (WO3) thin films using one-step hot filament chemical vapor deposition (HFCVD) method at low temperature. In a typical experiment, the parent material tungsten (W) was subjected to oxidation, gasification and its subsequent condensation to obtain the uniform deposition of WO3 thin film on silicon substrate at significantly low temperature of ∼200 °C. Prepared WO3 thin film possessed the cauliflower nanostructure (WCNs) with typical monoclinic WO3 crystal structure. Prepared WCNs thin films were applied for the detection of hydrogen (H2) gas at 100 ppm. H2 response increased with rise in temperature and the maximum response of ∼87% was obtained at the optimized temperature of ∼250 °C with response time 180 s.

KW - Hydrogen detection

KW - Low temperature HFCVD

KW - Surfaces

KW - Thin films

KW - WO

UR - https://www.scopus.com/pages/publications/85073703188

U2 - 10.1016/j.matlet.2019.07.110

DO - 10.1016/j.matlet.2019.07.110

M3 - Journal article

AN - SCOPUS:85073703188

SN - 0167-577X

VL - 254

SP - 398

EP - 401

JO - Materials Letters

JF - Materials Letters

ER -

Low temperature HFCVD synthesis of tungsten oxide thin film for high response hydrogen gas sensor application

Abstract

UN SDGs

Keywords

Quacquarelli Symonds(QS) Subject Topics

Access to Document

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