Low temperature measurement of the electrical conductivity in amorphous InGaZnO thin films

Hasung Sim; Seongil Choi; Je Geun Park; Jaewon Song; Seungwu Han; Cheol Seong Hwang; Deok Yong Choa

doi:10.1149/2.003402jss

Low temperature measurement of the electrical conductivity in amorphous InGaZnO thin films

Hasung Sim
, Seongil Choi
, Je Geun Park
, Jaewon Song
, Seungwu Han
, Cheol Seong Hwang
, Deok Yong Choa

Department of Physics

Seoul National University

Research output: Contribution to journal › Journal article › peer-review

7 Scopus citations

Abstract

We examine the temperature-dependent electrical conductivity in amorphous InGaZnO thin films with various cation compositions. In-rich films are metallic, while Ga-rich films are semiconducting with logarithmic conductivities linear to -T-1/4 above T = 60 K. The Zn-rich films are also semiconducting but have >102 times higher conductivity than the Ga-rich films. At T > 60 K, thermal electronic excitation dominantly contributes the conduction, while at T < 60 K, certain impurity scatterings or structural disorders have importance in the electrical properties in low carrier a-IGZO system.

Original language	English
Pages (from-to)	P10-P12
Journal	ECS Journal of Solid State Science and Technology
Volume	3
Issue number	2
DOIs	https://doi.org/10.1149/2.003402jss
State	Published - 2014

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title = "Low temperature measurement of the electrical conductivity in amorphous InGaZnO thin films",

abstract = "We examine the temperature-dependent electrical conductivity in amorphous InGaZnO thin films with various cation compositions. In-rich films are metallic, while Ga-rich films are semiconducting with logarithmic conductivities linear to -T-1/4 above T = 60 K. The Zn-rich films are also semiconducting but have >102 times higher conductivity than the Ga-rich films. At T > 60 K, thermal electronic excitation dominantly contributes the conduction, while at T < 60 K, certain impurity scatterings or structural disorders have importance in the electrical properties in low carrier a-IGZO system.",

author = "Hasung Sim and Seongil Choi and Park, \{Je Geun\} and Jaewon Song and Seungwu Han and Hwang, \{Cheol Seong\} and Choa, \{Deok Yong\}",

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doi = "10.1149/2.003402jss",

language = "English",

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T1 - Low temperature measurement of the electrical conductivity in amorphous InGaZnO thin films

AU - Sim, Hasung

AU - Choi, Seongil

AU - Park, Je Geun

AU - Song, Jaewon

AU - Han, Seungwu

AU - Hwang, Cheol Seong

AU - Choa, Deok Yong

PY - 2014

Y1 - 2014

N2 - We examine the temperature-dependent electrical conductivity in amorphous InGaZnO thin films with various cation compositions. In-rich films are metallic, while Ga-rich films are semiconducting with logarithmic conductivities linear to -T-1/4 above T = 60 K. The Zn-rich films are also semiconducting but have >102 times higher conductivity than the Ga-rich films. At T > 60 K, thermal electronic excitation dominantly contributes the conduction, while at T < 60 K, certain impurity scatterings or structural disorders have importance in the electrical properties in low carrier a-IGZO system.

AB - We examine the temperature-dependent electrical conductivity in amorphous InGaZnO thin films with various cation compositions. In-rich films are metallic, while Ga-rich films are semiconducting with logarithmic conductivities linear to -T-1/4 above T = 60 K. The Zn-rich films are also semiconducting but have >102 times higher conductivity than the Ga-rich films. At T > 60 K, thermal electronic excitation dominantly contributes the conduction, while at T < 60 K, certain impurity scatterings or structural disorders have importance in the electrical properties in low carrier a-IGZO system.

UR - https://www.scopus.com/pages/publications/84893796547

U2 - 10.1149/2.003402jss

DO - 10.1149/2.003402jss

M3 - Journal article

AN - SCOPUS:84893796547

SN - 2162-8769

VL - 3

SP - P10-P12

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 2

ER -

Low temperature measurement of the electrical conductivity in amorphous InGaZnO thin films

Abstract

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