Low voltage varistor ceramics based on SnO2

S. R. Dhage; V. Ravi; O. B. Yang

doi:10.1007/s12034-007-0092-8

Low voltage varistor ceramics based on SnO₂

S. R. Dhage^*
, V. Ravi
, O. B. Yang

^*Corresponding author for this work

Division of Chemical Engineering

Jeonbuk National University
CSIR - National Chemical Laboratory

Research output: Contribution to journal › Journal article › peer-review

13 Scopus citations

Abstract

The nonlinear current (I)-voltage (V) characteristics of tin dioxide doped with either Nb₂O₅ and CoO or Sb₂O₃ and CoO show promising values of nonlinear coefficient (α) values (∼11) with low breakdown voltages (E_B, ∼40 V mm ^-1). The pentavalent antimony or niobium acts as donor and increases the electronic conductivity. The crucial parameter for obtaining low breakdown voltage is the grain size, which depends upon sintering duration and temperature of these oxide ceramics.

Original language	English
Pages (from-to)	583-586
Number of pages	4
Journal	Bulletin of Materials Science
Volume	30
Issue number	6
DOIs	https://doi.org/10.1007/s12034-007-0092-8
State	Published - 2007.12

Keywords

Chemical synthesis
Electronic materials
Microstructure
Tin oxide
X-ray diffraction

Quacquarelli Symonds(QS) Subject Topics

Engineering - Mechanical
Materials Science

Access to Document

10.1007/s12034-007-0092-8

Cite this

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title = "Low voltage varistor ceramics based on SnO2",

abstract = "The nonlinear current (I)-voltage (V) characteristics of tin dioxide doped with either Nb2O5 and CoO or Sb2O3 and CoO show promising values of nonlinear coefficient (α) values (∼11) with low breakdown voltages (EB, ∼40 V mm -1). The pentavalent antimony or niobium acts as donor and increases the electronic conductivity. The crucial parameter for obtaining low breakdown voltage is the grain size, which depends upon sintering duration and temperature of these oxide ceramics.",

keywords = "Chemical synthesis, Electronic materials, Microstructure, Tin oxide, X-ray diffraction",

author = "Dhage, \{S. R.\} and V. Ravi and Yang, \{O. B.\}",

year = "2007",

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T1 - Low voltage varistor ceramics based on SnO2

AU - Dhage, S. R.

AU - Ravi, V.

AU - Yang, O. B.

PY - 2007/12

Y1 - 2007/12

N2 - The nonlinear current (I)-voltage (V) characteristics of tin dioxide doped with either Nb2O5 and CoO or Sb2O3 and CoO show promising values of nonlinear coefficient (α) values (∼11) with low breakdown voltages (EB, ∼40 V mm -1). The pentavalent antimony or niobium acts as donor and increases the electronic conductivity. The crucial parameter for obtaining low breakdown voltage is the grain size, which depends upon sintering duration and temperature of these oxide ceramics.

AB - The nonlinear current (I)-voltage (V) characteristics of tin dioxide doped with either Nb2O5 and CoO or Sb2O3 and CoO show promising values of nonlinear coefficient (α) values (∼11) with low breakdown voltages (EB, ∼40 V mm -1). The pentavalent antimony or niobium acts as donor and increases the electronic conductivity. The crucial parameter for obtaining low breakdown voltage is the grain size, which depends upon sintering duration and temperature of these oxide ceramics.

KW - Chemical synthesis

KW - Electronic materials

KW - Microstructure

KW - Tin oxide

KW - X-ray diffraction

UR - https://www.scopus.com/pages/publications/37749012677

U2 - 10.1007/s12034-007-0092-8

DO - 10.1007/s12034-007-0092-8

M3 - Journal article

AN - SCOPUS:37749012677

SN - 0250-4707

VL - 30

SP - 583

EP - 586

JO - Bulletin of Materials Science

JF - Bulletin of Materials Science

IS - 6

ER -