Magnesium interlayered diamond coating on silicon

M. A. Dar; S. G. Ansari; Z. A. Ansari; Hironobu Umemoto; Young Soon Kim; Hyung Kee Seo; Gil Sung Kim; Eun Kyung Suh; Hyung Shik Shin

doi:10.1016/j.ijrmhm.2005.06.009

Magnesium interlayered diamond coating on silicon

M. A. Dar
, S. G. Ansari
, Z. A. Ansari
, Hironobu Umemoto
, Young Soon Kim
, Hyung Kee Seo
, Gil Sung Kim
, Eun Kyung Suh
, Hyung Shik Shin^*

^*Corresponding author for this work

Division of Chemical Engineering

Jeonbuk National University
Japan Advanced Institute of Science and Technology

Research output: Contribution to journal › Journal article › peer-review

5 Scopus citations

Abstract

Diamond thin films have been deposited using hot filament chemical vapour deposition technique on manually scratched p-Si(1 0 0) substrate, with and without magnesium interlayer. In spite of magnesium melting point being lower (T_m = 649 °C) than the growth temperature of the substrate (T_s ∼ 750 °C) used in these experiments, it was found that high quality diamond films could be grown on Mg covered substrate. A liquid substrate is probably generated during the diamond film growth. Raman spectroscopy analysis exhibited only the triply degenerate, zone centre optical phonon peak at 1333 cm^-1 indicating that nearly stress free crystallites were present. Broadening of the Raman peak (∼11.76 cm^-1) indicates that some small crystallites also are present. Scanning electron and atomic force microscopy accompanied by X-ray diffraction analysis where used to compare the details of diamond film growth directly on scratched Si(1 0 0) and Mg interlayered scratched Si(1 0 0) substrates.

Original language	English
Pages (from-to)	418-426
Number of pages	9
Journal	International Journal of Refractory Metals and Hard Materials
Volume	24
Issue number	6
DOIs	https://doi.org/10.1016/j.ijrmhm.2005.06.009
State	Published - 2006.11

Keywords

Bias growth
Buffer layer
Diamond film
HFCVD

Quacquarelli Symonds(QS) Subject Topics

Engineering - Mechanical
Materials Science

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10.1016/j.ijrmhm.2005.06.009

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@article{f7969e24ecd54b098ee8b69341ab5cca,

title = "Magnesium interlayered diamond coating on silicon",

abstract = "Diamond thin films have been deposited using hot filament chemical vapour deposition technique on manually scratched p-Si(1 0 0) substrate, with and without magnesium interlayer. In spite of magnesium melting point being lower (Tm = 649 °C) than the growth temperature of the substrate (Ts ∼ 750 °C) used in these experiments, it was found that high quality diamond films could be grown on Mg covered substrate. A liquid substrate is probably generated during the diamond film growth. Raman spectroscopy analysis exhibited only the triply degenerate, zone centre optical phonon peak at 1333 cm-1 indicating that nearly stress free crystallites were present. Broadening of the Raman peak (∼11.76 cm-1) indicates that some small crystallites also are present. Scanning electron and atomic force microscopy accompanied by X-ray diffraction analysis where used to compare the details of diamond film growth directly on scratched Si(1 0 0) and Mg interlayered scratched Si(1 0 0) substrates.",

keywords = "Bias growth, Buffer layer, Diamond film, HFCVD",

author = "Dar, \{M. A.\} and Ansari, \{S. G.\} and Ansari, \{Z. A.\} and Hironobu Umemoto and Kim, \{Young Soon\} and Seo, \{Hyung Kee\} and Kim, \{Gil Sung\} and Suh, \{Eun Kyung\} and Shin, \{Hyung Shik\}",

year = "2006",

month = nov,

doi = "10.1016/j.ijrmhm.2005.06.009",

language = "English",

volume = "24",

pages = "418--426",

journal = "International Journal of Refractory Metals and Hard Materials",

issn = "0263-4368",

number = "6",

}

TY - JOUR

T1 - Magnesium interlayered diamond coating on silicon

AU - Dar, M. A.

AU - Ansari, S. G.

AU - Ansari, Z. A.

AU - Umemoto, Hironobu

AU - Kim, Young Soon

AU - Seo, Hyung Kee

AU - Kim, Gil Sung

AU - Suh, Eun Kyung

AU - Shin, Hyung Shik

PY - 2006/11

Y1 - 2006/11

N2 - Diamond thin films have been deposited using hot filament chemical vapour deposition technique on manually scratched p-Si(1 0 0) substrate, with and without magnesium interlayer. In spite of magnesium melting point being lower (Tm = 649 °C) than the growth temperature of the substrate (Ts ∼ 750 °C) used in these experiments, it was found that high quality diamond films could be grown on Mg covered substrate. A liquid substrate is probably generated during the diamond film growth. Raman spectroscopy analysis exhibited only the triply degenerate, zone centre optical phonon peak at 1333 cm-1 indicating that nearly stress free crystallites were present. Broadening of the Raman peak (∼11.76 cm-1) indicates that some small crystallites also are present. Scanning electron and atomic force microscopy accompanied by X-ray diffraction analysis where used to compare the details of diamond film growth directly on scratched Si(1 0 0) and Mg interlayered scratched Si(1 0 0) substrates.

AB - Diamond thin films have been deposited using hot filament chemical vapour deposition technique on manually scratched p-Si(1 0 0) substrate, with and without magnesium interlayer. In spite of magnesium melting point being lower (Tm = 649 °C) than the growth temperature of the substrate (Ts ∼ 750 °C) used in these experiments, it was found that high quality diamond films could be grown on Mg covered substrate. A liquid substrate is probably generated during the diamond film growth. Raman spectroscopy analysis exhibited only the triply degenerate, zone centre optical phonon peak at 1333 cm-1 indicating that nearly stress free crystallites were present. Broadening of the Raman peak (∼11.76 cm-1) indicates that some small crystallites also are present. Scanning electron and atomic force microscopy accompanied by X-ray diffraction analysis where used to compare the details of diamond film growth directly on scratched Si(1 0 0) and Mg interlayered scratched Si(1 0 0) substrates.

KW - Bias growth

KW - Buffer layer

KW - Diamond film

KW - HFCVD

UR - https://www.scopus.com/pages/publications/33746748696

U2 - 10.1016/j.ijrmhm.2005.06.009

DO - 10.1016/j.ijrmhm.2005.06.009

M3 - Journal article

AN - SCOPUS:33746748696

SN - 0263-4368

VL - 24

SP - 418

EP - 426

JO - International Journal of Refractory Metals and Hard Materials

JF - International Journal of Refractory Metals and Hard Materials

IS - 6

ER -

Magnesium interlayered diamond coating on silicon

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

Access to Document

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