Skip to main navigation Skip to search Skip to main content

Magnetic anisotropy and ac susceptibility of (Ga,Mn)As

  • Y. S. Kim*
  • , Z. G. Khim
  • , Jungbum Yoon
  • , Younghun Jo
  • , Myung Hwa Jung
  • , H. K. Choi
  • , Y. D. Park
  • , S. K. Jerng
  • , S. H. Chun
  • *Corresponding author for this work
  • Seoul National University
  • Korea Basic Science Institute
  • Korea Institute of Science and Technology
  • Sejong University

Research output: Contribution to journalJournal articlepeer-review

Abstract

We studied the interplay of the biaxial and the uniaxial contributions to the in-plane magnetic anisotropy of (Ga,Mn)As epilayers through comprehensive dc and ac magnetic susceptibility measurements. Detailed information about the magnetic anisotropy was obtained from hysteresis curves recorded for various crystal orientations and from the temperature dependence of the magnetization. The measured orientations were the [110], [-110], and [100] directions. Ac susceptibility measurements were also conducted for these directions. We argue that the peaks in the real and the imaginary parts of the ac susceptibility cannot be explained within the single-domain spin-reorientation model.

Original languageEnglish
Pages (from-to)839-843
Number of pages5
JournalJournal of the Korean Physical Society
Volume50
Issue number3
DOIs
StatePublished - 2007.03

Keywords

  • (Ga,Mn)As
  • Ac susceptibility
  • Dilute magnetic semiconductor
  • Magnetic anisotropy

Fingerprint

Dive into the research topics of 'Magnetic anisotropy and ac susceptibility of (Ga,Mn)As'. Together they form a unique fingerprint.

Cite this