Measurements of current spreading length and design of GaN-based light emitting diodes

Hyunsoo Kim; Jaehee Cho; Jeong Wook Lee; Sukho Yoon; Hyungkun Kim; Cheolsoo Sone; Yongjo Park; Tae Yeon Seong

doi:10.1063/1.2450670

Measurements of current spreading length and design of GaN-based light emitting diodes

Hyunsoo Kim^*
, Jaehee Cho
, Jeong Wook Lee
, Sukho Yoon
, Hyungkun Kim^*
, Cheolsoo Sone
, Yongjo Park
, Tae Yeon Seong

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Samsung
Korea University

Research output: Contribution to journal › Journal article › peer-review

46 Scopus citations

Abstract

The authors report on the experimental method to measure the current spreading length in GaN-based light emitting diodes (LEDs) based on a one-dimensional current-distribution model neglecting vertical series resistance of the LEDs. It is clearly shown that the measured current spreading length is in good agreement with the calculated results, exhibiting a strong dependence on the injected current density (or forward bias voltage). LEDs fabricated with hybrid p -type reflectors by using the proposed design rule and measured current spreading lengths show enhancement of the output power by 10% as compared to LEDs made with standard reflectors.

Original language	English
Article number	063510
Journal	Applied Physics Letters
Volume	90
Issue number	6
DOIs	https://doi.org/10.1063/1.2450670
State	Published - 2007

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10.1063/1.2450670

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title = "Measurements of current spreading length and design of GaN-based light emitting diodes",

abstract = "The authors report on the experimental method to measure the current spreading length in GaN-based light emitting diodes (LEDs) based on a one-dimensional current-distribution model neglecting vertical series resistance of the LEDs. It is clearly shown that the measured current spreading length is in good agreement with the calculated results, exhibiting a strong dependence on the injected current density (or forward bias voltage). LEDs fabricated with hybrid p -type reflectors by using the proposed design rule and measured current spreading lengths show enhancement of the output power by 10\% as compared to LEDs made with standard reflectors.",

author = "Hyunsoo Kim and Jaehee Cho and Lee, \{Jeong Wook\} and Sukho Yoon and Hyungkun Kim and Cheolsoo Sone and Yongjo Park and Seong, \{Tae Yeon\}",

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journal = "Applied Physics Letters",

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T1 - Measurements of current spreading length and design of GaN-based light emitting diodes

AU - Kim, Hyunsoo

AU - Cho, Jaehee

AU - Lee, Jeong Wook

AU - Yoon, Sukho

AU - Kim, Hyungkun

AU - Sone, Cheolsoo

AU - Park, Yongjo

AU - Seong, Tae Yeon

PY - 2007

Y1 - 2007

N2 - The authors report on the experimental method to measure the current spreading length in GaN-based light emitting diodes (LEDs) based on a one-dimensional current-distribution model neglecting vertical series resistance of the LEDs. It is clearly shown that the measured current spreading length is in good agreement with the calculated results, exhibiting a strong dependence on the injected current density (or forward bias voltage). LEDs fabricated with hybrid p -type reflectors by using the proposed design rule and measured current spreading lengths show enhancement of the output power by 10% as compared to LEDs made with standard reflectors.

AB - The authors report on the experimental method to measure the current spreading length in GaN-based light emitting diodes (LEDs) based on a one-dimensional current-distribution model neglecting vertical series resistance of the LEDs. It is clearly shown that the measured current spreading length is in good agreement with the calculated results, exhibiting a strong dependence on the injected current density (or forward bias voltage). LEDs fabricated with hybrid p -type reflectors by using the proposed design rule and measured current spreading lengths show enhancement of the output power by 10% as compared to LEDs made with standard reflectors.

UR - https://www.scopus.com/pages/publications/33846982209

U2 - 10.1063/1.2450670

DO - 10.1063/1.2450670

M3 - Journal article

AN - SCOPUS:33846982209

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 063510

ER -

Measurements of current spreading length and design of GaN-based light emitting diodes

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