Measuring the junction temperature of III-nitride light emitting diodes using electro-luminescence shift

Jaehee Cho; Cheolsoo Sone; Yongjo Park; Euijoon Yoon

doi:10.1002/pssa.200520041

Measuring the junction temperature of III-nitride light emitting diodes using electro-luminescence shift

Jaehee Cho^*
, Cheolsoo Sone
, Yongjo Park
, Euijoon Yoon

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Samsung
Seoul National University

Research output: Contribution to journal › Journal article › peer-review

56 Scopus citations

Abstract

The junction temperature rise of light emitting diodes due to self-heating effects during operation of the LED is measured using the electro-luminescence of the band-to-band recombination. This method is useful for the junction temperature monitoring of small geometry devices, indirectly. The junction temperature measured in InGaN/GaN multi-quantum well LEDs with 1 mm ² device size rises to 180 °C when the input current is 380 mA. The relationship between the junction temperature and the LED efficiency is clarified with experimental results.

Original language	English
Pages (from-to)	1869-1873
Number of pages	5
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	202
Issue number	9
DOIs	https://doi.org/10.1002/pssa.200520041
State	Published - 2005.07

Access to Document

10.1002/pssa.200520041

Cite this

@article{2bf7724298324caabce1ea0d9ca475db,

title = "Measuring the junction temperature of III-nitride light emitting diodes using electro-luminescence shift",

abstract = "The junction temperature rise of light emitting diodes due to self-heating effects during operation of the LED is measured using the electro-luminescence of the band-to-band recombination. This method is useful for the junction temperature monitoring of small geometry devices, indirectly. The junction temperature measured in InGaN/GaN multi-quantum well LEDs with 1 mm 2 device size rises to 180 °C when the input current is 380 mA. The relationship between the junction temperature and the LED efficiency is clarified with experimental results.",

author = "Jaehee Cho and Cheolsoo Sone and Yongjo Park and Euijoon Yoon",

year = "2005",

month = jul,

doi = "10.1002/pssa.200520041",

language = "English",

volume = "202",

pages = "1869--1873",

journal = "Physica Status Solidi (A) Applications and Materials Science",

issn = "1862-6300",

number = "9",

}

TY - JOUR

T1 - Measuring the junction temperature of III-nitride light emitting diodes using electro-luminescence shift

AU - Cho, Jaehee

AU - Sone, Cheolsoo

AU - Park, Yongjo

AU - Yoon, Euijoon

PY - 2005/7

Y1 - 2005/7

N2 - The junction temperature rise of light emitting diodes due to self-heating effects during operation of the LED is measured using the electro-luminescence of the band-to-band recombination. This method is useful for the junction temperature monitoring of small geometry devices, indirectly. The junction temperature measured in InGaN/GaN multi-quantum well LEDs with 1 mm 2 device size rises to 180 °C when the input current is 380 mA. The relationship between the junction temperature and the LED efficiency is clarified with experimental results.

AB - The junction temperature rise of light emitting diodes due to self-heating effects during operation of the LED is measured using the electro-luminescence of the band-to-band recombination. This method is useful for the junction temperature monitoring of small geometry devices, indirectly. The junction temperature measured in InGaN/GaN multi-quantum well LEDs with 1 mm 2 device size rises to 180 °C when the input current is 380 mA. The relationship between the junction temperature and the LED efficiency is clarified with experimental results.

UR - https://www.scopus.com/pages/publications/25444439014

U2 - 10.1002/pssa.200520041

DO - 10.1002/pssa.200520041

M3 - Journal article

AN - SCOPUS:25444439014

SN - 1862-6300

VL - 202

SP - 1869

EP - 1873

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 9

ER -

Measuring the junction temperature of III-nitride light emitting diodes using electro-luminescence shift

Abstract

Access to Document

Other files and links

Fingerprint

Cite this