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Mechanically reliable MEMS variable capacitor using Single Crystalline Silicon (SCS) structure

  • Jong Man Kim*
  • , Sanghyo Lee
  • , Jung Mu Kim*
  • , Chang Wook Baek
  • , Youngwoo Kwon
  • , Yong Kweon Kim
  • *Corresponding author for this work
  • Seoul National University
  • Chung-Ang University

Research output: Contribution to conferenceConference paperpeer-review

Abstract

In this paper, we firstly proposed a mechanically reliable parallel-plate type variable capacitor with a single crystalline silicon (SCS) supporting structure. The demonstrated variable capacitor was fabricated using an SiOG (Silicon-On-Glass) process, and both mechanical and electrical characteristics were measured. Total chip size was 1.05 mm × 0.72 mm, and the pull-in voltage was measured to be 37 V. With and without the applied DC bias, the measured S11 and S21 were changed from -15.6 dB to -5.1 dB, and from -0.49 dB to -2.3 dB at 30 GHz, respectively. The measured capacitance at the up and the down state were 30 fF and 140 fF, respectively. Therefore, the capacitance ratio is calculated to be 4.67.

Original languageEnglish
Title of host publicationTRANSDUCERS '05 - 13th International Conference on Solid-State Sensors and Actuators and Microsystems - Digest of Technical Papers
Pages1080-1083
Number of pages4
StatePublished - 2005
Event13th International Conference on Solid-State Sensors and Actuators and Microsystems, TRANSDUCERS '05 - Seoul, Korea, Republic of
Duration: 2005.06.52005.06.9

Publication series

NameDigest of Technical Papers - International Conference on Solid State Sensors and Actuators and Microsystems, TRANSDUCERS '05
Volume1

Conference

Conference13th International Conference on Solid-State Sensors and Actuators and Microsystems, TRANSDUCERS '05
Country/TerritoryKorea, Republic of
CitySeoul
Period05.06.505.06.9

Keywords

  • Mechanical lifetime
  • Mechanical reliability
  • SCS RF MEMS variable capacitor
  • SiOG process

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