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Metastable quantum dot for photoelectric devices via flash-induced one-step sequential self-formation

  • Tae Hong Im
  • , Chul Hee Lee
  • , Jong Chan Kim
  • , Shinho Kim
  • , Mina Kim
  • , Cheol Min Park
  • , Han Eol Lee
  • , Jung Hwan Park
  • , Min Seok Jang
  • , Doh C. Lee
  • , Sung Yool Choi
  • , Hee Seung Wang
  • , Hu Young Jeong*
  • , Duk Young Jeon
  • , Keon Jae Lee
  • *Corresponding author for this work
  • Korea Advanced Institute of Science and Technology
  • Ulsan National Institute of Science and Technology

Research output: Contribution to journalJournal articlepeer-review

Abstract

The first metastable phase Ag, ZnS: α-In2S3 QDs were synthesized by ultrafast light-material interaction. The multiple irradiation of millisecond flash pulses facilitated thermodynamic non-equilibrium superheating and quenching for metastable QD formation, as well as sequential self-formation of α-In2S3 QD nucleation, Ag-doping and ZnS-passivation by photo-responsive ionic kinetics. Upon multiple illumination of flash pulses, the synthesis mechanism of Ag, ZnS: α-In2S3 QD was experimentally proved by atomic-resolution transmission electron microscopy (AR-TEM), scanning TEM (STEM) and diverse spectral analysis. To verify the metastable phase QD formation by superheating/quenching in reaction solution, the localized surface plasmon (LSP) properties and instantaneous temperature increment were theoretically calculated using finite-difference time-domain (FDTD) method. Finally, optoelectronic performance and long-term stability of as-synthesized QDs were evaluated by demonstrating the broad wavelength metal-semiconductor-metal (MSM) photoelectric device.

Original languageEnglish
Article number105889
JournalNano Energy
Volume84
DOIs
StatePublished - 2021.06

Keywords

  • Light-material interaction
  • Localized-surface plasmon
  • Metastable quantum dot
  • Photoelectric device
  • Sequential self-formation

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