Method for determining the radiative efficiency of GaInN quantum wells based on the width of efficiency-versus-carrier-concentration curve

Guan Bo Lin; Qifeng Shan; Andrew J. Birkel; Jaehee Cho; E. Fred Schubert; Mary H. Crawford; Karl R. Westlake; Daniel D. Koleske

doi:10.1063/1.4770317

Method for determining the radiative efficiency of GaInN quantum wells based on the width of efficiency-versus-carrier-concentration curve

Guan Bo Lin^*
, Qifeng Shan
, Andrew J. Birkel
, Jaehee Cho
, E. Fred Schubert
, Mary H. Crawford
, Karl R. Westlake
, Daniel D. Koleske

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Rensselaer Polytechnic Institute
Sandia National Laboratories, New Mexico

Research output: Contribution to journal › Journal article › peer-review

18 Scopus citations

Abstract

We report a method to determine the radiative efficiency (RE) of a semiconductor by using room-temperature excitation-dependent photoluminescence measurements. Using the ABC model for describing the recombination of carriers, we show that the theoretical width of the RE-versus-carrier-concentration (n) curve is related to the peak RE. Since the normalized external quantum efficiency, EQE_normalized, is proportional to the RE, and the square root of the light-output power, √LOP, is proportional to n, the experimentally determined width of the √EQE_normalized-versus-n curve can be used to determine the RE. We demonstrate a peak RE of 91% for a Ga_0.85In_0.15N quantum well.

Original language	English
Article number	241104
Journal	Applied Physics Letters
Volume	101
Issue number	24
DOIs	https://doi.org/10.1063/1.4770317
State	Published - 2012.12.10

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@article{6dcdd3404ea14aca882b4c30aa84a283,

title = "Method for determining the radiative efficiency of GaInN quantum wells based on the width of efficiency-versus-carrier-concentration curve",

abstract = "We report a method to determine the radiative efficiency (RE) of a semiconductor by using room-temperature excitation-dependent photoluminescence measurements. Using the ABC model for describing the recombination of carriers, we show that the theoretical width of the RE-versus-carrier-concentration (n) curve is related to the peak RE. Since the normalized external quantum efficiency, EQEnormalized, is proportional to the RE, and the square root of the light-output power, √LOP, is proportional to n, the experimentally determined width of the √EQEnormalized-versus-n curve can be used to determine the RE. We demonstrate a peak RE of 91\% for a Ga0.85In0.15N quantum well.",

author = "Lin, \{Guan Bo\} and Qifeng Shan and Birkel, \{Andrew J.\} and Jaehee Cho and \{Fred Schubert\}, E. and Crawford, \{Mary H.\} and Westlake, \{Karl R.\} and Koleske, \{Daniel D.\}",

year = "2012",

month = dec,

day = "10",

doi = "10.1063/1.4770317",

language = "English",

volume = "101",

journal = "Applied Physics Letters",

issn = "0003-6951",

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TY - JOUR

T1 - Method for determining the radiative efficiency of GaInN quantum wells based on the width of efficiency-versus-carrier-concentration curve

AU - Lin, Guan Bo

AU - Shan, Qifeng

AU - Birkel, Andrew J.

AU - Cho, Jaehee

AU - Fred Schubert, E.

AU - Crawford, Mary H.

AU - Westlake, Karl R.

AU - Koleske, Daniel D.

PY - 2012/12/10

Y1 - 2012/12/10

N2 - We report a method to determine the radiative efficiency (RE) of a semiconductor by using room-temperature excitation-dependent photoluminescence measurements. Using the ABC model for describing the recombination of carriers, we show that the theoretical width of the RE-versus-carrier-concentration (n) curve is related to the peak RE. Since the normalized external quantum efficiency, EQEnormalized, is proportional to the RE, and the square root of the light-output power, √LOP, is proportional to n, the experimentally determined width of the √EQEnormalized-versus-n curve can be used to determine the RE. We demonstrate a peak RE of 91% for a Ga0.85In0.15N quantum well.

AB - We report a method to determine the radiative efficiency (RE) of a semiconductor by using room-temperature excitation-dependent photoluminescence measurements. Using the ABC model for describing the recombination of carriers, we show that the theoretical width of the RE-versus-carrier-concentration (n) curve is related to the peak RE. Since the normalized external quantum efficiency, EQEnormalized, is proportional to the RE, and the square root of the light-output power, √LOP, is proportional to n, the experimentally determined width of the √EQEnormalized-versus-n curve can be used to determine the RE. We demonstrate a peak RE of 91% for a Ga0.85In0.15N quantum well.

UR - https://www.scopus.com/pages/publications/84871334517

U2 - 10.1063/1.4770317

DO - 10.1063/1.4770317

M3 - Journal article

AN - SCOPUS:84871334517

SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 241104

ER -

Method for determining the radiative efficiency of GaInN quantum wells based on the width of efficiency-versus-carrier-concentration curve

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