Microphotoluminescence spectroscopy of single CdTe/ZnTe quantum dots grown on Si(001) substrates

H. S. Lee; A. Rastelli; M. Benyoucef; F. Ding; T. W. Kim; H. L. Park; O. G. Schmidt

doi:10.1088/0957-4484/20/7/075705

Microphotoluminescence spectroscopy of single CdTe/ZnTe quantum dots grown on Si(001) substrates

H. S. Lee
, A. Rastelli
, M. Benyoucef
, F. Ding
, T. W. Kim
, H. L. Park
, O. G. Schmidt

Department of Physics

Leibniz Institute for Solid State and Materials Research Dresden
Max Planck Institute for Solid State Research
Hanyang University
Yonsei University

Research output: Contribution to journal › Journal article › peer-review

18 Scopus citations

Abstract

We have studied the emission properties of single CdTe/ZnTe quantum dots (QDs) grown on Si(001) substrates by using molecular beam epitaxy and atomic layer epitaxy. The good quality of the QDs is attested by the resolution-limited emission, negligible background and absence of measurable spectral jitter or blinking. Power-dependent, polarization-dependent, and temperature-dependent microphotoluminescence spectroscopy measurements were performed to identify the exciton, the biexciton, and two oppositely charged excitons in the emission spectra of single QDs.

Original language	English
Article number	075705
Journal	Nanotechnology
Volume	20
Issue number	7
DOIs	https://doi.org/10.1088/0957-4484/20/7/075705
State	Published - 2009

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title = "Microphotoluminescence spectroscopy of single CdTe/ZnTe quantum dots grown on Si(001) substrates",

abstract = "We have studied the emission properties of single CdTe/ZnTe quantum dots (QDs) grown on Si(001) substrates by using molecular beam epitaxy and atomic layer epitaxy. The good quality of the QDs is attested by the resolution-limited emission, negligible background and absence of measurable spectral jitter or blinking. Power-dependent, polarization-dependent, and temperature-dependent microphotoluminescence spectroscopy measurements were performed to identify the exciton, the biexciton, and two oppositely charged excitons in the emission spectra of single QDs.",

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language = "English",

volume = "20",

journal = "Nanotechnology",

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T1 - Microphotoluminescence spectroscopy of single CdTe/ZnTe quantum dots grown on Si(001) substrates

AU - Lee, H. S.

AU - Rastelli, A.

AU - Benyoucef, M.

AU - Ding, F.

AU - Kim, T. W.

AU - Park, H. L.

AU - Schmidt, O. G.

PY - 2009

Y1 - 2009

N2 - We have studied the emission properties of single CdTe/ZnTe quantum dots (QDs) grown on Si(001) substrates by using molecular beam epitaxy and atomic layer epitaxy. The good quality of the QDs is attested by the resolution-limited emission, negligible background and absence of measurable spectral jitter or blinking. Power-dependent, polarization-dependent, and temperature-dependent microphotoluminescence spectroscopy measurements were performed to identify the exciton, the biexciton, and two oppositely charged excitons in the emission spectra of single QDs.

AB - We have studied the emission properties of single CdTe/ZnTe quantum dots (QDs) grown on Si(001) substrates by using molecular beam epitaxy and atomic layer epitaxy. The good quality of the QDs is attested by the resolution-limited emission, negligible background and absence of measurable spectral jitter or blinking. Power-dependent, polarization-dependent, and temperature-dependent microphotoluminescence spectroscopy measurements were performed to identify the exciton, the biexciton, and two oppositely charged excitons in the emission spectra of single QDs.

UR - https://www.scopus.com/pages/publications/65349099014

U2 - 10.1088/0957-4484/20/7/075705

DO - 10.1088/0957-4484/20/7/075705

M3 - Journal article

AN - SCOPUS:65349099014

SN - 0957-4484

VL - 20

JO - Nanotechnology

JF - Nanotechnology

IS - 7

M1 - 075705

ER -

Microphotoluminescence spectroscopy of single CdTe/ZnTe quantum dots grown on Si(001) substrates

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