Microstructural and chemical properties of high-k holmium oxide (Ho2O3) and its effect on interface properties and current transport process of Au/n-GaN/Ti/Al Schottky contact as an interlayer

Chel-Jong Choi

Microstructural and chemical properties of high-k holmium oxide (Ho2O3) and its effect on interface properties and current transport process of Au/n-GaN/Ti/Al Schottky contact as an interlayer  

Chel-Jong Choi

Department of Semiconductor Science and Technology

Research output: Contribution to journal › Journal article › peer-review

Original language	Korean
Journal	Vacuum
State	Published - 2025.01.1

Cite this

@article{6c656aeaeab74ec88ad710c49a26a3a0,

title = "Microstructural and chemical properties of high-k holmium oxide (Ho2O3) and its effect on interface properties and current transport process of Au/n-GaN/Ti/Al Schottky contact as an interlayer  ",

author = "Chel-Jong Choi",

year = "2025",

month = jan,

day = "1",

language = "Korean",

journal = "Vacuum",

issn = "0042-207X",

}