Microstructural and chemical properties of high-k holmium oxide (Ho2O3) and its effect on interface properties and current transport process of Au/n-GaN/Ti/Al Schottky contact as an interlayer
- D. Surya Reddy
- , V. Rajagopal Reddy*
- , V. Janardhanam
- , Chel Jong Choi*
*Corresponding author for this work
- Sri Venkateswara University
- Jeonbuk National University
Research output: Contribution to journal › Journal article › peer-review
10
Link opens in a new tab
Scopus
citations