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Microstructural properties at the interfaces of zno nanorods and ZNO homo-buffer layers

  • Changha Kwak
  • , Byung Hyuk Kim
  • , Chang Ln Park
  • , Sun Hong Park
  • , Soo Young Seo
  • , Seon Hyo Kim
  • , Sang Wook Han*
  • *Corresponding author for this work
  • Pohang University of Science and Technology
  • Jeonbuk National University
  • Research Institute of Industrial Science & Technology, Pohang

Research output: Contribution to journalJournal articlepeer-review

Abstract

Uniformly and vertically well-aligned ZnO nanorods were fabricated in-situ and ex-situ on ZnO films using a catalyst-free metal-organic chemical vapor process. Microstructural properties of the initial growth of ZnO nanorods on ZnO films with different surface roughnesses were investigated. We observed that the ZnO nanorods grown on ZnO films with surface roughness of less than 1.0 nm were well-aligned along the c-axis and in the ab-plane. When the nanorods grew on ZnO films with a large surface roughness, they had three different growth directions of 28°, 62deg;, and 90deg; to the film surface. The slant angle of 62deg; corresponds to the angle between the ZnO(001) and (101) planes. The initial growth direction difference caused structural disorder at the interface of the ZnO nanorod and film, and prevented epitaxial growth and the alignment of the nanorods.

Original languageEnglish
Pages (from-to)912-918
Number of pages7
JournalJournal of nanoscience and nanotechnology
Volume10
Issue number2
DOIs
StatePublished - 2010.02

Keywords

  • Epitaxial growth
  • Homo-buffer
  • MOCVD
  • Nanorod
  • Structure
  • ZnO

Quacquarelli Symonds(QS) Subject Topics

  • Materials Science
  • Engineering - Chemical
  • Chemistry
  • Physics & Astronomy
  • Biological Sciences

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