Microstructural properties of thermally stable Ti/W/Au ohmic contacts on n-type GaN

N. Ramesha Reddy; V. Rajagopal Reddy; Chel Jong Choi

doi:10.1016/j.mee.2006.02.019

Microstructural properties of thermally stable Ti/W/Au ohmic contacts on n-type GaN

N. Ramesha Reddy
, V. Rajagopal Reddy^*
, Chel Jong Choi

^*Corresponding author for this work

Department of Semiconductor Science and Technology

University of Mysore
Electronics and Telecommunications Research Institute

Research output: Contribution to journal › Journal article › peer-review

5 Scopus citations

Abstract

We have investigated the microstructural and electrical characteristics of Ti/W/Au ohmic contacts on n-type GaN (4.0 × 10¹⁸ cm^-3) using Auger electron spectroscopy (AES) and transmission electron microscopy (TEM) after annealing at 900 °C. It is shown that the electrical properties are improved upon annealing at 900 °C for 1 min in nitrogen ambient. The 900 °C annealed contact produced a specific contact resistance of 8.4 × 10^-6 Ω cm². It is further shown that the contact exhibits thermal stability during annealing at 900 °C. Based on the Auger electron microscopy and transmission electron microscopy studies, the formation of TiN layer results in an excess of N vacancies near the surface of the GaN layer, which could be the reason for the low-resistance of the Ti/W/Au contact.

Original language	English
Pages (from-to)	1981-1985
Number of pages	5
Journal	Microelectronic Engineering
Volume	83
Issue number	10
DOIs	https://doi.org/10.1016/j.mee.2006.02.019
State	Published - 2006.10

Keywords

Auger electron microscopy
Microstructural
Ohmic contacts
Transmission electron microscopy

Access to Document

10.1016/j.mee.2006.02.019

Cite this

@article{ff9b2477dc324a9eae06c77cae80b38e,

title = "Microstructural properties of thermally stable Ti/W/Au ohmic contacts on n-type GaN",

abstract = "We have investigated the microstructural and electrical characteristics of Ti/W/Au ohmic contacts on n-type GaN (4.0 × 1018 cm-3) using Auger electron spectroscopy (AES) and transmission electron microscopy (TEM) after annealing at 900 °C. It is shown that the electrical properties are improved upon annealing at 900 °C for 1 min in nitrogen ambient. The 900 °C annealed contact produced a specific contact resistance of 8.4 × 10-6 Ω cm2. It is further shown that the contact exhibits thermal stability during annealing at 900 °C. Based on the Auger electron microscopy and transmission electron microscopy studies, the formation of TiN layer results in an excess of N vacancies near the surface of the GaN layer, which could be the reason for the low-resistance of the Ti/W/Au contact.",

keywords = "Auger electron microscopy, Microstructural, Ohmic contacts, Transmission electron microscopy",

author = "Reddy, \{N. Ramesha\} and Reddy, \{V. Rajagopal\} and Choi, \{Chel Jong\}",

year = "2006",

month = oct,

doi = "10.1016/j.mee.2006.02.019",

language = "English",

volume = "83",

pages = "1981--1985",

journal = "Microelectronic Engineering",

issn = "0167-9317",

number = "10",

}

TY - JOUR

T1 - Microstructural properties of thermally stable Ti/W/Au ohmic contacts on n-type GaN

AU - Reddy, N. Ramesha

AU - Reddy, V. Rajagopal

AU - Choi, Chel Jong

PY - 2006/10

Y1 - 2006/10

N2 - We have investigated the microstructural and electrical characteristics of Ti/W/Au ohmic contacts on n-type GaN (4.0 × 1018 cm-3) using Auger electron spectroscopy (AES) and transmission electron microscopy (TEM) after annealing at 900 °C. It is shown that the electrical properties are improved upon annealing at 900 °C for 1 min in nitrogen ambient. The 900 °C annealed contact produced a specific contact resistance of 8.4 × 10-6 Ω cm2. It is further shown that the contact exhibits thermal stability during annealing at 900 °C. Based on the Auger electron microscopy and transmission electron microscopy studies, the formation of TiN layer results in an excess of N vacancies near the surface of the GaN layer, which could be the reason for the low-resistance of the Ti/W/Au contact.

AB - We have investigated the microstructural and electrical characteristics of Ti/W/Au ohmic contacts on n-type GaN (4.0 × 1018 cm-3) using Auger electron spectroscopy (AES) and transmission electron microscopy (TEM) after annealing at 900 °C. It is shown that the electrical properties are improved upon annealing at 900 °C for 1 min in nitrogen ambient. The 900 °C annealed contact produced a specific contact resistance of 8.4 × 10-6 Ω cm2. It is further shown that the contact exhibits thermal stability during annealing at 900 °C. Based on the Auger electron microscopy and transmission electron microscopy studies, the formation of TiN layer results in an excess of N vacancies near the surface of the GaN layer, which could be the reason for the low-resistance of the Ti/W/Au contact.

KW - Auger electron microscopy

KW - Microstructural

KW - Ohmic contacts

KW - Transmission electron microscopy

UR - https://www.scopus.com/pages/publications/33745177791

U2 - 10.1016/j.mee.2006.02.019

DO - 10.1016/j.mee.2006.02.019

M3 - Journal article

AN - SCOPUS:33745177791

SN - 0167-9317

VL - 83

SP - 1981

EP - 1985

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 10

ER -

Microstructural properties of thermally stable Ti/W/Au ohmic contacts on n-type GaN

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this