Microstructure development and evolution

M. O. Bloomfield; Yeon Ho Im; T. S. Cale

doi:10.1109/SISPAD.2003.1233627

Microstructure development and evolution

M. O. Bloomfield
, Yeon Ho Im
, T. S. Cale

Division of Chemical Engineering

Rensselaer Polytechnic Institute

Research output: Contribution to conference › Conference paper › peer-review

10 Scopus citations

Abstract

We employ a level set-based geometry tracking software using a "grain continuum" representation, together with models for selected IC manufacturing processes and for microstructural evolution to study the development of grain structures. We consider electroless deposition, physical vapor deposition and grain boundary migration during curvature-driven ripening. We use an "encapsulation technique" to convert atomistic data; e.g., from Monte Carlo simulations of nucleation, to continua for input to deposition studies.

Original language	English
Title of host publication	SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	19-22
Number of pages	4
ISBN (Electronic)	0780378261
DOIs	https://doi.org/10.1109/SISPAD.2003.1233627
State	Published - 2003
Event	2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003 - Boston, United States Duration: 2003.09.3 → 2003.09.5

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume	2003-January

Conference

Conference	2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003
Country/Territory	United States
City	Boston
Period	03.09.3 → 03.09.5

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 9 Industry, Innovation, and Infrastructure

Keywords

Computational modeling
Encapsulation
Geometry
Grain boundaries
Integrated circuit modeling
Microstructure
Partial differential equations
Plasma simulation
Solid modeling
Surface topography

Access to Document

10.1109/SISPAD.2003.1233627

Cite this

Bloomfield, M. O., Im, Y. H., & Cale, T. S. (2003). Microstructure development and evolution. In SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices (pp. 19-22). Article 1233627 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SISPAD.2003.1233627

@inproceedings{ed7a04deea4d4484910db9f956a2b3b8,

title = "Microstructure development and evolution",

abstract = "We employ a level set-based geometry tracking software using a {"}grain continuum{"} representation, together with models for selected IC manufacturing processes and for microstructural evolution to study the development of grain structures. We consider electroless deposition, physical vapor deposition and grain boundary migration during curvature-driven ripening. We use an {"}encapsulation technique{"} to convert atomistic data; e.g., from Monte Carlo simulations of nucleation, to continua for input to deposition studies.",

keywords = "Computational modeling, Encapsulation, Geometry, Grain boundaries, Integrated circuit modeling, Microstructure, Partial differential equations, Plasma simulation, Solid modeling, Surface topography",

author = "Bloomfield, \{M. O.\} and Im, \{Yeon Ho\} and Cale, \{T. S.\}",

note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003 ; Conference date: 03-09-2003 Through 05-09-2003",

year = "2003",

doi = "10.1109/SISPAD.2003.1233627",

language = "English",

series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "19--22",

booktitle = "SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices",

}

Bloomfield, MO, Im, YH & Cale, TS 2003, Microstructure development and evolution. in SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices., 1233627, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, vol. 2003-January, Institute of Electrical and Electronics Engineers Inc., pp. 19-22, 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003, Boston, United States, 03.09.3. https://doi.org/10.1109/SISPAD.2003.1233627

Microstructure development and evolution. / Bloomfield, M. O.; Im, Yeon Ho; Cale, T. S.
SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices. Institute of Electrical and Electronics Engineers Inc., 2003. p. 19-22 1233627 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2003-January).

Research output: Contribution to conference › Conference paper › peer-review

TY - GEN

T1 - Microstructure development and evolution

AU - Bloomfield, M. O.

AU - Im, Yeon Ho

AU - Cale, T. S.

PY - 2003

Y1 - 2003

N2 - We employ a level set-based geometry tracking software using a "grain continuum" representation, together with models for selected IC manufacturing processes and for microstructural evolution to study the development of grain structures. We consider electroless deposition, physical vapor deposition and grain boundary migration during curvature-driven ripening. We use an "encapsulation technique" to convert atomistic data; e.g., from Monte Carlo simulations of nucleation, to continua for input to deposition studies.

AB - We employ a level set-based geometry tracking software using a "grain continuum" representation, together with models for selected IC manufacturing processes and for microstructural evolution to study the development of grain structures. We consider electroless deposition, physical vapor deposition and grain boundary migration during curvature-driven ripening. We use an "encapsulation technique" to convert atomistic data; e.g., from Monte Carlo simulations of nucleation, to continua for input to deposition studies.

KW - Computational modeling

KW - Encapsulation

KW - Geometry

KW - Grain boundaries

KW - Integrated circuit modeling

KW - Microstructure

KW - Partial differential equations

KW - Plasma simulation

KW - Solid modeling

KW - Surface topography

UR - https://www.scopus.com/pages/publications/84943246933

U2 - 10.1109/SISPAD.2003.1233627

DO - 10.1109/SISPAD.2003.1233627

M3 - Conference paper

AN - SCOPUS:84943246933

T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

SP - 19

EP - 22

BT - SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003

Y2 - 3 September 2003 through 5 September 2003

ER -

Bloomfield MO, Im YH, Cale TS. Microstructure development and evolution. In SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices. Institute of Electrical and Electronics Engineers Inc. 2003. p. 19-22. 1233627. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). doi: 10.1109/SISPAD.2003.1233627

Microstructure development and evolution

Abstract

Publication series

Conference

UN SDGs

Keywords

Access to Document

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