Millisecond Pulsed Light Annealing for Improving Performance of Top-Gate Self-Aligned a-IGZO TFT

Heetae Kim; Seohak Park; Johak Jeong; Jun Hwe Cha; Hoseok Lee; Chihun Sung; Jeho Na; Keun Heo; Sung Haeng Cho; Sung Yool Choi; Byung Jin Cho

doi:10.1109/TED.2025.3556116

Millisecond Pulsed Light Annealing for Improving Performance of Top-Gate Self-Aligned a-IGZO TFT

Heetae Kim
, Seohak Park
, Johak Jeong
, Jun Hwe Cha
, Hoseok Lee
, Chihun Sung
, Jeho Na
, Keun Heo
, Sung Haeng Cho
, Sung Yool Choi^*
, Byung Jin Cho^*

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Research output: Contribution to journal › Journal article › peer-review

2 Scopus citations

Abstract

The application of millisecond intense pulsed light (IPL) annealing to improve the electrical properties of top-gate self-aligned (TG-SA) amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) was investigated. The IPL annealing with a pulse energy of 40 J/cm² and a pulsewidth of 20 ms resulted in 53.7% increase in µ_FE and a 128.4% improvement in l_on, compared to the unannealed devices. These improvements are attributed to the selective improvement of the specific contact resistivity (p_c) by the IPL annealing. In addition, positive bias stress (PBS) reliability and temperature-dependent I–V measurements show the improved stability in the IPL-annealed devices and the lower activation energy (E_A) for charge transport, indicating that the channel region would also have a lower defect density and barrier height for carrier transport.

Original language	English
Pages (from-to)	2399-2405
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	72
Issue number	5
DOIs	https://doi.org/10.1109/TED.2025.3556116
State	Published - 2025

Keywords

Intense pulsed light (IPL)
millisecond annealing
oxide semiconductor

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Engineering - Electrical & Electronic
Engineering - Petroleum

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10.1109/TED.2025.3556116

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@article{189fdf68df0744e397e3c0ee42768d7c,

title = "Millisecond Pulsed Light Annealing for Improving Performance of Top-Gate Self-Aligned a-IGZO TFT",

abstract = "The application of millisecond intense pulsed light (IPL) annealing to improve the electrical properties of top-gate self-aligned (TG-SA) amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) was investigated. The IPL annealing with a pulse energy of 40 J/cm2 and a pulsewidth of 20 ms resulted in 53.7\% increase in µFE and a 128.4\% improvement in lon, compared to the unannealed devices. These improvements are attributed to the selective improvement of the specific contact resistivity (pc) by the IPL annealing. In addition, positive bias stress (PBS) reliability and temperature-dependent I–V measurements show the improved stability in the IPL-annealed devices and the lower activation energy (EA) for charge transport, indicating that the channel region would also have a lower defect density and barrier height for carrier transport.",

keywords = "Intense pulsed light (IPL), millisecond annealing, oxide semiconductor",

author = "Heetae Kim and Seohak Park and Johak Jeong and Cha, \{Jun Hwe\} and Hoseok Lee and Chihun Sung and Jeho Na and Keun Heo and Cho, \{Sung Haeng\} and Choi, \{Sung Yool\} and Cho, \{Byung Jin\}",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2025",

doi = "10.1109/TED.2025.3556116",

language = "English",

volume = "72",

pages = "2399--2405",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

number = "5",

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TY - JOUR

T1 - Millisecond Pulsed Light Annealing for Improving Performance of Top-Gate Self-Aligned a-IGZO TFT

AU - Kim, Heetae

AU - Park, Seohak

AU - Jeong, Johak

AU - Cha, Jun Hwe

AU - Lee, Hoseok

AU - Sung, Chihun

AU - Na, Jeho

AU - Heo, Keun

AU - Cho, Sung Haeng

AU - Choi, Sung Yool

AU - Cho, Byung Jin

PY - 2025

Y1 - 2025

N2 - The application of millisecond intense pulsed light (IPL) annealing to improve the electrical properties of top-gate self-aligned (TG-SA) amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) was investigated. The IPL annealing with a pulse energy of 40 J/cm2 and a pulsewidth of 20 ms resulted in 53.7% increase in µFE and a 128.4% improvement in lon, compared to the unannealed devices. These improvements are attributed to the selective improvement of the specific contact resistivity (pc) by the IPL annealing. In addition, positive bias stress (PBS) reliability and temperature-dependent I–V measurements show the improved stability in the IPL-annealed devices and the lower activation energy (EA) for charge transport, indicating that the channel region would also have a lower defect density and barrier height for carrier transport.

AB - The application of millisecond intense pulsed light (IPL) annealing to improve the electrical properties of top-gate self-aligned (TG-SA) amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) was investigated. The IPL annealing with a pulse energy of 40 J/cm2 and a pulsewidth of 20 ms resulted in 53.7% increase in µFE and a 128.4% improvement in lon, compared to the unannealed devices. These improvements are attributed to the selective improvement of the specific contact resistivity (pc) by the IPL annealing. In addition, positive bias stress (PBS) reliability and temperature-dependent I–V measurements show the improved stability in the IPL-annealed devices and the lower activation energy (EA) for charge transport, indicating that the channel region would also have a lower defect density and barrier height for carrier transport.

KW - Intense pulsed light (IPL)

KW - millisecond annealing

KW - oxide semiconductor

UR - https://www.scopus.com/pages/publications/105002493524

U2 - 10.1109/TED.2025.3556116

DO - 10.1109/TED.2025.3556116

M3 - Journal article

AN - SCOPUS:105002493524

SN - 0018-9383

VL - 72

SP - 2399

EP - 2405

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 5

ER -

Millisecond Pulsed Light Annealing for Improving Performance of Top-Gate Self-Aligned a-IGZO TFT

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

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