Modeling and separate extraction of gate-bias- and channel-length-dependent intrinsic and extrinsic sourcedrain resistances in MOSFETs

Hagyoul Bae; Jaeman Jang; Ja Sun Shin; Daeyoun Yun; Jieun Lee; Tae Wan Kim; Dae Hwan Kim; Dong Myong Kim

doi:10.1109/LED.2011.2131116

Modeling and separate extraction of gate-bias- and channel-length-dependent intrinsic and extrinsic sourcedrain resistances in MOSFETs

Hagyoul Bae^*
, Jaeman Jang
, Ja Sun Shin
, Daeyoun Yun
, Jieun Lee
, Tae Wan Kim
, Dae Hwan Kim
, Dong Myong Kim

^*Corresponding author for this work

Division of Electronic Engineering

Kookmin University
Hongik University

Research output: Contribution to journal › Journal article › peer-review

14 Scopus citations

Abstract

A new technique for a separate extraction of the current-path-dependent resistance (R_SD0) from the contact-dependent source and drain resistances (R_Se and R_De) is reported for a single MOSFET. We also report a technique for a separation of V_GS -dependent source and drain resistance (R_SDi) from the V_GS- and L _eff-dependent channel resistance (R_ch) with multiple MOSFETs. We confirm the proposed techniques applied to n-channel MOSFETs with various W/L combinations and obtain R_Se = 10.5 - 12.4 Ω, R _De ≅ 12.7 Ω, and R_SD0 = 4.7 Ω for W = 10 μm. V_GS-dependent but L-independent R_SDi is extracted to be 2.8 - 4.2 Ω.

Original language	English
Article number	5756637
Pages (from-to)	722-724
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	6
DOIs	https://doi.org/10.1109/LED.2011.2131116
State	Published - 2011.06

Keywords

Drain resistance
extraction
extrinsic
intrinsic resistance
MOSFET
parasitic resistance
source resistance

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10.1109/LED.2011.2131116

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@article{bd90e6ab84564eb3bb587095856a88e9,

title = "Modeling and separate extraction of gate-bias- and channel-length-dependent intrinsic and extrinsic sourcedrain resistances in MOSFETs",

abstract = "A new technique for a separate extraction of the current-path-dependent resistance (RSD0) from the contact-dependent source and drain resistances (RSe and RDe) is reported for a single MOSFET. We also report a technique for a separation of VGS -dependent source and drain resistance (RSDi) from the VGS- and L eff-dependent channel resistance (Rch) with multiple MOSFETs. We confirm the proposed techniques applied to n-channel MOSFETs with various W/L combinations and obtain RSe = 10.5 - 12.4 Ω, R De ≅ 12.7 Ω, and RSD0 = 4.7 Ω for W = 10 μm. VGS-dependent but L-independent RSDi is extracted to be 2.8 - 4.2 Ω.",

keywords = "Drain resistance, extraction, extrinsic, intrinsic resistance, MOSFET, parasitic resistance, source resistance",

author = "Hagyoul Bae and Jaeman Jang and Shin, \{Ja Sun\} and Daeyoun Yun and Jieun Lee and Kim, \{Tae Wan\} and Kim, \{Dae Hwan\} and Kim, \{Dong Myong\}",

year = "2011",

month = jun,

doi = "10.1109/LED.2011.2131116",

language = "English",

volume = "32",

pages = "722--724",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

number = "6",

}

TY - JOUR

T1 - Modeling and separate extraction of gate-bias- and channel-length-dependent intrinsic and extrinsic sourcedrain resistances in MOSFETs

AU - Bae, Hagyoul

AU - Jang, Jaeman

AU - Shin, Ja Sun

AU - Yun, Daeyoun

AU - Lee, Jieun

AU - Kim, Tae Wan

AU - Kim, Dae Hwan

AU - Kim, Dong Myong

PY - 2011/6

Y1 - 2011/6

N2 - A new technique for a separate extraction of the current-path-dependent resistance (RSD0) from the contact-dependent source and drain resistances (RSe and RDe) is reported for a single MOSFET. We also report a technique for a separation of VGS -dependent source and drain resistance (RSDi) from the VGS- and L eff-dependent channel resistance (Rch) with multiple MOSFETs. We confirm the proposed techniques applied to n-channel MOSFETs with various W/L combinations and obtain RSe = 10.5 - 12.4 Ω, R De ≅ 12.7 Ω, and RSD0 = 4.7 Ω for W = 10 μm. VGS-dependent but L-independent RSDi is extracted to be 2.8 - 4.2 Ω.

AB - A new technique for a separate extraction of the current-path-dependent resistance (RSD0) from the contact-dependent source and drain resistances (RSe and RDe) is reported for a single MOSFET. We also report a technique for a separation of VGS -dependent source and drain resistance (RSDi) from the VGS- and L eff-dependent channel resistance (Rch) with multiple MOSFETs. We confirm the proposed techniques applied to n-channel MOSFETs with various W/L combinations and obtain RSe = 10.5 - 12.4 Ω, R De ≅ 12.7 Ω, and RSD0 = 4.7 Ω for W = 10 μm. VGS-dependent but L-independent RSDi is extracted to be 2.8 - 4.2 Ω.

KW - Drain resistance

KW - extraction

KW - extrinsic

KW - intrinsic resistance

KW - MOSFET

KW - parasitic resistance

KW - source resistance

UR - https://www.scopus.com/pages/publications/79957616843

U2 - 10.1109/LED.2011.2131116

DO - 10.1109/LED.2011.2131116

M3 - Journal article

AN - SCOPUS:79957616843

SN - 0741-3106

VL - 32

SP - 722

EP - 724

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 6

M1 - 5756637

ER -

Modeling and separate extraction of gate-bias- and channel-length-dependent intrinsic and extrinsic sourcedrain resistances in MOSFETs

Abstract

Keywords

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