Abstract
The electrical properties of Ti/p-type InP Schottky diodes with and without polyaniline (PANI) interlayer was investigated using current–voltage (I– V) and capacitance–voltage (C–V) measurements. The barrier height of Ti/p-type InP Schottky diode with PANI interlayer was higher than that of the conventional Ti/p-type InP Schottky diode, implying that the organic interlayer influenced the spacecharge region of the Ti/p-type InP Schottky junction. At higher voltages, the current transport was dominated by the trap free space-charge-limited current and trap-filled space-charge-limited current in Ti/p-type InP Schottky diode without and with PANI interlayer, respectively. The domination of trap filled space-charge-limited current in Ti/p-type InP Schottky diode with PANI interlayer could be associated with the traps originated from structural defects prevailing in organic PANI interlayer.
| Original language | English |
|---|---|
| Pages (from-to) | 664-674 |
| Number of pages | 11 |
| Journal | Journal of Semiconductor Technology and Science |
| Volume | 16 |
| Issue number | 5 |
| DOIs | |
| State | Published - 2016.10 |
Keywords
- Barrier height
- InP
- Interface state density
- PANI
- Schottky diode
Quacquarelli Symonds(QS) Subject Topics
- Materials Science
- Engineering - Electrical & Electronic
- Engineering - Petroleum
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