Abstract
The electrical characteristics of a Pt/n-type Ge Schottky diode with a pyronine-B (PYR-B) interlayer prepared by spin coating was investigated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. It was observed that the barrier height of Pt/PYR-B/n-type Ge (0.65 eV) was higher than that of the conventional Pt/n-type Ge Schottky diode (0.58 eV). This is attributed to the fact that the organic interlayer increases the effective barrier height by influencing the space-charge region of Ge. The introduction of the PYR-B interlayer led to a reduction of the interface state density in the Pt Schottky contact to n-type Ge. The electric field dependence of the reverse leakage current revealed that Schottky emission and Poole-Frenkel emission mechanisms dominated the reverse current in the Pt/n-type Ge and Pt/PYR-B/n-type Ge Schottky diodes, respectively.
| Original language | English |
|---|---|
| Pages (from-to) | 806-817 |
| Number of pages | 12 |
| Journal | Superlattices and Microstructures |
| Volume | 75 |
| DOIs | |
| State | Published - 2014.11 |
Keywords
- Germanium
- Interface state density-
- Reverse leakage mechanism
- Schottky contact
- Surface potential
Quacquarelli Symonds(QS) Subject Topics
- Materials Science
- Engineering - Electrical & Electronic
- Engineering - Petroleum
- Physics & Astronomy
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