Modulation of deep level structures in SiO2 upon nitrogen incorporation

Sukmin Jeong; Atsushi Oshiyama

doi:10.1016/S0921-4526(01)00840-7

Modulation of deep level structures in SiO₂ upon nitrogen incorporation

Sukmin Jeong
, Atsushi Oshiyama^*

^*Corresponding author for this work

Department of Physics

University of Tsukuba

Research output: Contribution to journal › Journal article › peer-review

1 Scopus citations

Abstract

We present first-principles total-energy calculations that provide energetics, charge states and electronic structures for various bond configurations around N in SiO₂ with and without hydrogen. It is found that the carrier traps are effectively removed near the energy gap upon coexistence of H and N. Effects of spin polarization around the defects are clarified.

Original language	English
Pages (from-to)	999-1002
Number of pages	4
Journal	Physica B: Physics of Condensed Matter
Volume	308-310
DOIs	https://doi.org/10.1016/S0921-4526(01)00840-7
State	Published - 2001.12

Keywords

Carrier trap
Density functional theory
Nitridation
SiO

Access to Document

10.1016/S0921-4526(01)00840-7

Cite this

@article{5f573386200b43d5a013755426b0187e,

title = "Modulation of deep level structures in SiO2 upon nitrogen incorporation",

abstract = "We present first-principles total-energy calculations that provide energetics, charge states and electronic structures for various bond configurations around N in SiO2 with and without hydrogen. It is found that the carrier traps are effectively removed near the energy gap upon coexistence of H and N. Effects of spin polarization around the defects are clarified.",

keywords = "Carrier trap, Density functional theory, Nitridation, SiO",

author = "Sukmin Jeong and Atsushi Oshiyama",

year = "2001",

month = dec,

doi = "10.1016/S0921-4526(01)00840-7",

language = "English",

volume = "308-310",

pages = "999--1002",

journal = "Physica B: Physics of Condensed Matter",

issn = "0921-4526",

}

TY - JOUR

T1 - Modulation of deep level structures in SiO2 upon nitrogen incorporation

AU - Jeong, Sukmin

AU - Oshiyama, Atsushi

PY - 2001/12

Y1 - 2001/12

N2 - We present first-principles total-energy calculations that provide energetics, charge states and electronic structures for various bond configurations around N in SiO2 with and without hydrogen. It is found that the carrier traps are effectively removed near the energy gap upon coexistence of H and N. Effects of spin polarization around the defects are clarified.

AB - We present first-principles total-energy calculations that provide energetics, charge states and electronic structures for various bond configurations around N in SiO2 with and without hydrogen. It is found that the carrier traps are effectively removed near the energy gap upon coexistence of H and N. Effects of spin polarization around the defects are clarified.

KW - Carrier trap

KW - Density functional theory

KW - Nitridation

KW - SiO

UR - https://www.scopus.com/pages/publications/0035676502

U2 - 10.1016/S0921-4526(01)00840-7

DO - 10.1016/S0921-4526(01)00840-7

M3 - Journal article

AN - SCOPUS:0035676502

SN - 0921-4526

VL - 308-310

SP - 999

EP - 1002

JO - Physica B: Physics of Condensed Matter

JF - Physica B: Physics of Condensed Matter

ER -

Modulation of deep level structures in SiO₂ upon nitrogen incorporation

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this