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Molecular orientation dependence of hole-injection barrier in pentacene thin film on the Au surface in organic thin film transistor

  • Kyuwook Ihm
  • , Bongsoo Kim
  • , Tai Hee Kang
  • , Ki Jeong Kim
  • , Min Ho Joo
  • , Tae Hyeong Kim
  • , Sang Soo Yoon
  • , Sukmin Chung*
  • *Corresponding author for this work
  • Pohang Accelerator Laboratory
  • LG Corporation
  • Pohang University of Science and Technology

Research output: Contribution to journalJournal articlepeer-review

Abstract

We have investigated the effects of a buffer layer insertion on the performance of the pentacene based thin film transistor with a bottom contact structure. When the pentacene molecules have a standing up coordination on the Au surface that is modified by the benzenethiol or methanethiol, the transition region in the pentacene thin film is removed along the boundary between the Au and silicon oxide region, and the hole-injection barrier decreases by 0.4 eV. Pentacene on various surfaces showed that the highly occupied molecular level is 0.2-0.4 eV lower in the standing up coordination than in the lying down coordination.

Original languageEnglish
Article number033504
JournalApplied Physics Letters
Volume89
Issue number3
DOIs
StatePublished - 2006

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