Monocliniclike local atomic structure in amorphous ZrO2 thin film

Deok Yong Cho; Hyung Suk Jung; Jeong Hwan Kim; Cheol Seong Hwang

doi:10.1063/1.3497077

Monocliniclike local atomic structure in amorphous ZrO₂ thin film

Deok Yong Cho^*
, Hyung Suk Jung
, Jeong Hwan Kim
, Cheol Seong Hwang

^*Corresponding author for this work

Department of Physics

Seoul National University

Research output: Contribution to journal › Journal article › peer-review

29 Scopus citations

Abstract

The local atomic structure and electronic structure of amorphous ZrO ₂ (a-ZrO₂) thin film were examined using the ZrK - and OK-edge x-ray absorption spectroscopy and x-ray photoelectron spectroscopy. It was found that a monoclinic local structure is stabilized in several nanometers-thick a-ZrO₂ films due to the structural disorder. The distinct local structure in a-ZrO₂ from the ordinary tetragonal ZrO₂ (t-ZrO₂) films results in different electronic structure with a decrease in the band gap by 0.5 eV. The reduced band gap and dielectric constant of a ZrO₂ suggest inferior gate leakage current performances compared to the t-ZrO₂ films.

Original language	English
Article number	141905
Journal	Applied Physics Letters
Volume	97
Issue number	14
DOIs	https://doi.org/10.1063/1.3497077
State	Published - 2010.10.4

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title = "Monocliniclike local atomic structure in amorphous ZrO2 thin film",

abstract = "The local atomic structure and electronic structure of amorphous ZrO 2 (a-ZrO2) thin film were examined using the ZrK - and OK-edge x-ray absorption spectroscopy and x-ray photoelectron spectroscopy. It was found that a monoclinic local structure is stabilized in several nanometers-thick a-ZrO2 films due to the structural disorder. The distinct local structure in a-ZrO2 from the ordinary tetragonal ZrO2 (t-ZrO2) films results in different electronic structure with a decrease in the band gap by 0.5 eV. The reduced band gap and dielectric constant of a ZrO2 suggest inferior gate leakage current performances compared to the t-ZrO2 films.",

author = "Cho, \{Deok Yong\} and Jung, \{Hyung Suk\} and Kim, \{Jeong Hwan\} and Hwang, \{Cheol Seong\}",

year = "2010",

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doi = "10.1063/1.3497077",

language = "English",

volume = "97",

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T1 - Monocliniclike local atomic structure in amorphous ZrO2 thin film

AU - Cho, Deok Yong

AU - Jung, Hyung Suk

AU - Kim, Jeong Hwan

AU - Hwang, Cheol Seong

PY - 2010/10/4

Y1 - 2010/10/4

N2 - The local atomic structure and electronic structure of amorphous ZrO 2 (a-ZrO2) thin film were examined using the ZrK - and OK-edge x-ray absorption spectroscopy and x-ray photoelectron spectroscopy. It was found that a monoclinic local structure is stabilized in several nanometers-thick a-ZrO2 films due to the structural disorder. The distinct local structure in a-ZrO2 from the ordinary tetragonal ZrO2 (t-ZrO2) films results in different electronic structure with a decrease in the band gap by 0.5 eV. The reduced band gap and dielectric constant of a ZrO2 suggest inferior gate leakage current performances compared to the t-ZrO2 films.

AB - The local atomic structure and electronic structure of amorphous ZrO 2 (a-ZrO2) thin film were examined using the ZrK - and OK-edge x-ray absorption spectroscopy and x-ray photoelectron spectroscopy. It was found that a monoclinic local structure is stabilized in several nanometers-thick a-ZrO2 films due to the structural disorder. The distinct local structure in a-ZrO2 from the ordinary tetragonal ZrO2 (t-ZrO2) films results in different electronic structure with a decrease in the band gap by 0.5 eV. The reduced band gap and dielectric constant of a ZrO2 suggest inferior gate leakage current performances compared to the t-ZrO2 films.

UR - https://www.scopus.com/pages/publications/77958072647

U2 - 10.1063/1.3497077

DO - 10.1063/1.3497077

M3 - Journal article

AN - SCOPUS:77958072647

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 141905

ER -

Monocliniclike local atomic structure in amorphous ZrO₂ thin film

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