Multi-scale analysis of GaAs MOVPE process by using wide-stripe selective area growth and computational fluid dynamics simulation

Haizheng Song; Ik Tae Im; Masakazu Sugiyama; Yoshiaki Nakano; Yukihiro Shimogaki

Multi-scale analysis of GaAs MOVPE process by using wide-stripe selective area growth and computational fluid dynamics simulation

Haizheng Song^*
, Ik Tae Im
, Masakazu Sugiyama
, Yoshiaki Nakano
, Yukihiro Shimogaki

^*Corresponding author for this work

Mechanical Design Engineering

The University of Tokyo
Japan Science and Technology Agency
Japan Society for the Promotion of Science
Iksan National College

Research output: Contribution to conference › Conference paper › peer-review

2 Scopus citations

Abstract

A multi scale analysis by combining the computational fluid dynamics (CFD) analysis and wide stripe selective area growth (SAG) analysis has been employed to elucidate GaAs MOVPE process at 600 °C. It can extract major route to deposit films and related kinetic information, experimentally. The CFD simulation reproduced the macro scale variation of GaAs growth rate along the flow direction. The major rate-limiting step was the mass transport of the group III species. By analyzing the micro scale growth rate profile in SAG, the value of surface reaction rate constant (k_s) has been obtained. The value of k_s varied along the flow direction, suggesting that the surface reaction is not a simple first-order reaction of an intermediate species. The profile of k_s along the flow direction suggested the contribution of trimethyl-gallium (TMGa) itself to the surface reaction and the effect of by-products.

Original language	English
Title of host publication	State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) -and- Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI
Publisher	Electrochemical Society Inc.
Pages	113-120
Number of pages	8
Edition	2
ISBN (Electronic)	9781607685395
State	Published - 2006
Event	43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society - Los Angeles, CA, United States Duration: 2005.10.16 → 2005.10.21

Publication series

Name	ECS Transactions
Number	2
Volume	1
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society
Country/Territory	United States
City	Los Angeles, CA
Period	05.10.16 → 05.10.21

Cite this

Song, H., Im, I. T., Sugiyama, M., Nakano, Y., & Shimogaki, Y. (2006). Multi-scale analysis of GaAs MOVPE process by using wide-stripe selective area growth and computational fluid dynamics simulation. In State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) -and- Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI (2 ed., pp. 113-120). (ECS Transactions; Vol. 1, No. 2). Electrochemical Society Inc..

Song, Haizheng ; Im, Ik Tae ; Sugiyama, Masakazu et al. / Multi-scale analysis of GaAs MOVPE process by using wide-stripe selective area growth and computational fluid dynamics simulation. State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) -and- Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI. 2. ed. Electrochemical Society Inc., 2006. pp. 113-120 (ECS Transactions; 2).

@inproceedings{a6a70a3cc53d4298abbf8dc48ea6197e,

title = "Multi-scale analysis of GaAs MOVPE process by using wide-stripe selective area growth and computational fluid dynamics simulation",

abstract = "A multi scale analysis by combining the computational fluid dynamics (CFD) analysis and wide stripe selective area growth (SAG) analysis has been employed to elucidate GaAs MOVPE process at 600 °C. It can extract major route to deposit films and related kinetic information, experimentally. The CFD simulation reproduced the macro scale variation of GaAs growth rate along the flow direction. The major rate-limiting step was the mass transport of the group III species. By analyzing the micro scale growth rate profile in SAG, the value of surface reaction rate constant (ks) has been obtained. The value of ks varied along the flow direction, suggesting that the surface reaction is not a simple first-order reaction of an intermediate species. The profile of ks along the flow direction suggested the contribution of trimethyl-gallium (TMGa) itself to the surface reaction and the effect of by-products.",

author = "Haizheng Song and Im, \{Ik Tae\} and Masakazu Sugiyama and Yoshiaki Nakano and Yukihiro Shimogaki",

year = "2006",

language = "English",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "2",

pages = "113--120",

booktitle = "State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) -and- Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI",

edition = "2",

note = "43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society ; Conference date: 16-10-2005 Through 21-10-2005",

}

Song, H, Im, IT, Sugiyama, M, Nakano, Y & Shimogaki, Y 2006, Multi-scale analysis of GaAs MOVPE process by using wide-stripe selective area growth and computational fluid dynamics simulation. in State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) -and- Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI. 2 edn, ECS Transactions, no. 2, vol. 1, Electrochemical Society Inc., pp. 113-120, 43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society, Los Angeles, CA, United States, 05.10.16.

Multi-scale analysis of GaAs MOVPE process by using wide-stripe selective area growth and computational fluid dynamics simulation. / Song, Haizheng; Im, Ik Tae; Sugiyama, Masakazu et al.
State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) -and- Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI. 2. ed. Electrochemical Society Inc., 2006. p. 113-120 (ECS Transactions; Vol. 1, No. 2).

Research output: Contribution to conference › Conference paper › peer-review

TY - GEN

T1 - Multi-scale analysis of GaAs MOVPE process by using wide-stripe selective area growth and computational fluid dynamics simulation

AU - Song, Haizheng

AU - Im, Ik Tae

AU - Sugiyama, Masakazu

AU - Nakano, Yoshiaki

AU - Shimogaki, Yukihiro

PY - 2006

Y1 - 2006

N2 - A multi scale analysis by combining the computational fluid dynamics (CFD) analysis and wide stripe selective area growth (SAG) analysis has been employed to elucidate GaAs MOVPE process at 600 °C. It can extract major route to deposit films and related kinetic information, experimentally. The CFD simulation reproduced the macro scale variation of GaAs growth rate along the flow direction. The major rate-limiting step was the mass transport of the group III species. By analyzing the micro scale growth rate profile in SAG, the value of surface reaction rate constant (ks) has been obtained. The value of ks varied along the flow direction, suggesting that the surface reaction is not a simple first-order reaction of an intermediate species. The profile of ks along the flow direction suggested the contribution of trimethyl-gallium (TMGa) itself to the surface reaction and the effect of by-products.

AB - A multi scale analysis by combining the computational fluid dynamics (CFD) analysis and wide stripe selective area growth (SAG) analysis has been employed to elucidate GaAs MOVPE process at 600 °C. It can extract major route to deposit films and related kinetic information, experimentally. The CFD simulation reproduced the macro scale variation of GaAs growth rate along the flow direction. The major rate-limiting step was the mass transport of the group III species. By analyzing the micro scale growth rate profile in SAG, the value of surface reaction rate constant (ks) has been obtained. The value of ks varied along the flow direction, suggesting that the surface reaction is not a simple first-order reaction of an intermediate species. The profile of ks along the flow direction suggested the contribution of trimethyl-gallium (TMGa) itself to the surface reaction and the effect of by-products.

UR - https://www.scopus.com/pages/publications/32844464257

M3 - Conference paper

AN - SCOPUS:32844464257

T3 - ECS Transactions

SP - 113

EP - 120

BT - State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) -and- Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI

PB - Electrochemical Society Inc.

T2 - 43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society

Y2 - 16 October 2005 through 21 October 2005

ER -

Song H, Im IT, Sugiyama M, Nakano Y, Shimogaki Y. Multi-scale analysis of GaAs MOVPE process by using wide-stripe selective area growth and computational fluid dynamics simulation. In State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) -and- Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI. 2 ed. Electrochemical Society Inc. 2006. p. 113-120. (ECS Transactions; 2).

Multi-scale analysis of GaAs MOVPE process by using wide-stripe selective area growth and computational fluid dynamics simulation

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