Nano-dot and nano-pit fabrication on a GaAs substrate by a pulse applied AFM

The nano-patterning characteristics of GaAs is investigated using a pulse applied atomic force microscope (AFM). Very short range voltage pulses of micro to nano-seconds' duration are applied to a conductive diamond-coated silicon (Si) tip in contact mode, to regulate the created feature size. The effects of pulse conditions such as pulse voltage, duration, frequency, offset voltage, anodization time, and applied tip pressure on nano-dot generation are characterized, based on the experiments. An interesting phenomenon, nano-pit creation instead of nano-dot creation, is observed when the applied pulse duration is less than 100 μs. Pulse frequency and offset voltage are also involved in nano-pit generation. The electrical spark discharge between the tip and the GaAs's surface is the most probable cause of the nano-pit creation and its generation mechanism is explained by considering the relevant pulse parameters. Nano-pits over 15 nm in depth are acquired on the GaAs substrate by adjusting the pulse conditions. This research facilitates the fabrication of more complex nano-structures on semiconductor materials since nano-dots and nano-pits could be easily made without any additional post-processes.