Nanoimprinted Zno and Zno quantum dots embedded Sio2 layers for inverted bulk heterojunction solar cells

Hwa Young Yang; Rafiq Ahmad; Mohammad Vaseem; Won Yeop Rho; Nirmalya Tripathy; Dae Geun Choi; Yoon Bong Hahn

doi:10.1166/sam.2015.2034

Nanoimprinted Zno and Zno quantum dots embedded Sio₂ layers for inverted bulk heterojunction solar cells

Hwa Young Yang
, Rafiq Ahmad
, Mohammad Vaseem
, Won Yeop Rho
, Nirmalya Tripathy
, Dae Geun Choi
, Yoon Bong Hahn^*

^*Corresponding author for this work

Division of International Engineering and Science

Jeonbuk National University
Korea Institute of Machinery and Materials

Research output: Contribution to journal › Journal article › peer-review

6 Scopus citations

Abstract

Inverted bulk heterojunction (BHJ) solar cells have received much interest due to their stability and lifetime. The inverted bulk heterojunction solar cells are fabricated based on poly(3-hexylthiophene (P3HT)) and Phenyl-C61-butyric acid methyl ester (PCBM). Proper engineering of nanostructures can enhance the adsorption of the sunlight in solar cells. Here, we used nanoimprint lithography technique to form nanoimprinted ZnO (NI-ZnO) or ZnO quantum dots-embedded SiO₂ nanoparticles (NI-SiO₂@ZnO) layers on ITO substrates. The nanoimprinted layer not only provides ideal scattering characteristics for optimum light trapping, but also acts as electron transport layer. Compared to the power conversion efficiency (PCE) of 1.83% with plain ZnO layer, the devices with NI-ZnO and NI-SiO₂@ZnO layers resulted in higher PCEs of 2.35% and 2.94%, respectively.

Original language	English
Pages (from-to)	1253-1257
Number of pages	5
Journal	Science of Advanced Materials
Volume	7
Issue number	7
DOIs	https://doi.org/10.1166/sam.2015.2034
State	Published - 2015

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Hybrid solar cell
Nanoimprint lithography
Silica nanosphere
ZnO layer
ZnO QDs

Quacquarelli Symonds(QS) Subject Topics

Materials Science

Access to Document

10.1166/sam.2015.2034

Cite this

@article{009866cc3fa048e096569c35963b2d8e,

title = "Nanoimprinted Zno and Zno quantum dots embedded Sio2 layers for inverted bulk heterojunction solar cells",

abstract = "Inverted bulk heterojunction (BHJ) solar cells have received much interest due to their stability and lifetime. The inverted bulk heterojunction solar cells are fabricated based on poly(3-hexylthiophene (P3HT)) and Phenyl-C61-butyric acid methyl ester (PCBM). Proper engineering of nanostructures can enhance the adsorption of the sunlight in solar cells. Here, we used nanoimprint lithography technique to form nanoimprinted ZnO (NI-ZnO) or ZnO quantum dots-embedded SiO2 nanoparticles (NI-SiO2@ZnO) layers on ITO substrates. The nanoimprinted layer not only provides ideal scattering characteristics for optimum light trapping, but also acts as electron transport layer. Compared to the power conversion efficiency (PCE) of 1.83\% with plain ZnO layer, the devices with NI-ZnO and NI-SiO2@ZnO layers resulted in higher PCEs of 2.35\% and 2.94\%, respectively.",

keywords = "Hybrid solar cell, Nanoimprint lithography, Silica nanosphere, ZnO layer, ZnO QDs",

author = "Yang, \{Hwa Young\} and Rafiq Ahmad and Mohammad Vaseem and Rho, \{Won Yeop\} and Nirmalya Tripathy and Choi, \{Dae Geun\} and Hahn, \{Yoon Bong\}",

note = "Publisher Copyright: {\textcopyright} 2015 by American Scientific Publishers.",

year = "2015",

doi = "10.1166/sam.2015.2034",

language = "English",

volume = "7",

pages = "1253--1257",

journal = "Science of Advanced Materials",

issn = "1947-2935",

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TY - JOUR

T1 - Nanoimprinted Zno and Zno quantum dots embedded Sio2 layers for inverted bulk heterojunction solar cells

AU - Yang, Hwa Young

AU - Ahmad, Rafiq

AU - Vaseem, Mohammad

AU - Rho, Won Yeop

AU - Tripathy, Nirmalya

AU - Choi, Dae Geun

AU - Hahn, Yoon Bong

PY - 2015

Y1 - 2015

N2 - Inverted bulk heterojunction (BHJ) solar cells have received much interest due to their stability and lifetime. The inverted bulk heterojunction solar cells are fabricated based on poly(3-hexylthiophene (P3HT)) and Phenyl-C61-butyric acid methyl ester (PCBM). Proper engineering of nanostructures can enhance the adsorption of the sunlight in solar cells. Here, we used nanoimprint lithography technique to form nanoimprinted ZnO (NI-ZnO) or ZnO quantum dots-embedded SiO2 nanoparticles (NI-SiO2@ZnO) layers on ITO substrates. The nanoimprinted layer not only provides ideal scattering characteristics for optimum light trapping, but also acts as electron transport layer. Compared to the power conversion efficiency (PCE) of 1.83% with plain ZnO layer, the devices with NI-ZnO and NI-SiO2@ZnO layers resulted in higher PCEs of 2.35% and 2.94%, respectively.

AB - Inverted bulk heterojunction (BHJ) solar cells have received much interest due to their stability and lifetime. The inverted bulk heterojunction solar cells are fabricated based on poly(3-hexylthiophene (P3HT)) and Phenyl-C61-butyric acid methyl ester (PCBM). Proper engineering of nanostructures can enhance the adsorption of the sunlight in solar cells. Here, we used nanoimprint lithography technique to form nanoimprinted ZnO (NI-ZnO) or ZnO quantum dots-embedded SiO2 nanoparticles (NI-SiO2@ZnO) layers on ITO substrates. The nanoimprinted layer not only provides ideal scattering characteristics for optimum light trapping, but also acts as electron transport layer. Compared to the power conversion efficiency (PCE) of 1.83% with plain ZnO layer, the devices with NI-ZnO and NI-SiO2@ZnO layers resulted in higher PCEs of 2.35% and 2.94%, respectively.

KW - Hybrid solar cell

KW - Nanoimprint lithography

KW - Silica nanosphere

KW - ZnO layer

KW - ZnO QDs

UR - https://www.scopus.com/pages/publications/84922120111

U2 - 10.1166/sam.2015.2034

DO - 10.1166/sam.2015.2034

M3 - Journal article

AN - SCOPUS:84922120111

SN - 1947-2935

VL - 7

SP - 1253

EP - 1257

JO - Science of Advanced Materials

JF - Science of Advanced Materials

IS - 7

ER -