Nanolayer patterning based on surface modification with extreme ultraviolet light

The use of extreme ultraviolet (EUV)-induced surface modification for synthesis of nanolayer patterning was investigated. Firstly, the Si (100) wafer was cleaned by heating it to 900°C. Then, the clean Si(100) surface was exposed to 10 Langmuir (L) Cl₂ gas to make the Cl₂ molecular layer. The clean and Cl₂-absorbed surface were analyzed by synchrotron radiation PES, carried out on the 8Al and 7Bi beamlines. The Cl ₂/Si(100) surface was irradiated using a finely focused EUV beam of 650 eV for 5 minute at each position after experimental chamber was filled with NH₃ gas to a partial pressure of 1×10^-6. A Fresnel zone plate was used to increase the photon flux per unit area by focusing the EUV to ca. 1μm. It was observed that wavelength of light affected surface modification of nanolayers. Result shows that a Cl nanolayer exhibiting a thickness less than 1 nm can be modified with EUV.