Nanoscale dry etching of germanium by using inductively coupled CF 4 plasma

Kyu Hwan Shim; Ha Yong Yang; Yeon Ho Kil; Hyeon Deok Yang; Jong Han Yang; Woong Ki Hong; Sukill Kang; Tae Soo Jeong; Taek Sung Kim

doi:10.1007/s13391-012-1109-z

Nanoscale dry etching of germanium by using inductively coupled CF ₄ plasma

Kyu Hwan Shim
, Ha Yong Yang
, Yeon Ho Kil
, Hyeon Deok Yang
, Jong Han Yang
, Woong Ki Hong
, Sukill Kang
, Tae Soo Jeong
, Taek Sung Kim

Jeonbuk National University

Research output: Contribution to journal › Journal article › peer-review

19 Scopus citations

Abstract

The nanoscale dry etching of germanium was investigated by using inductively coupled CF ₄ plasma and electron-beam lithography. The optimal dose of PMMA as E-beam lithography resist was ~200 mC/cm ². When ICP Power was 200W, CF ₄ gas flow rate was 40 sccm, and process pressure was 20 mTorr, it had a smooth surface and good etch rate. The etching selectivity of Ge wafer to PMMA resist was as low as ~1. 5. Various sub-100 nm dry-etching patterns have been obtained. SEM pictures showed good profile qualities with a smooth etching sidewall and ultrasmall etching features.

Original language	English
Pages (from-to)	423-428
Number of pages	6
Journal	Electronic Materials Letters
Volume	8
Issue number	4
DOIs	https://doi.org/10.1007/s13391-012-1109-z
State	Published - 2012.08

Keywords

etching
Ge
ICP
nanoscale
plasma

Quacquarelli Symonds(QS) Subject Topics

Materials Science

Access to Document

10.1007/s13391-012-1109-z

Cite this

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title = "Nanoscale dry etching of germanium by using inductively coupled CF 4 plasma",

abstract = "The nanoscale dry etching of germanium was investigated by using inductively coupled CF 4 plasma and electron-beam lithography. The optimal dose of PMMA as E-beam lithography resist was \textasciitilde{}200 mC/cm 2. When ICP Power was 200W, CF 4 gas flow rate was 40 sccm, and process pressure was 20 mTorr, it had a smooth surface and good etch rate. The etching selectivity of Ge wafer to PMMA resist was as low as \textasciitilde{}1. 5. Various sub-100 nm dry-etching patterns have been obtained. SEM pictures showed good profile qualities with a smooth etching sidewall and ultrasmall etching features.",

keywords = "etching, Ge, ICP, nanoscale, plasma",

author = "Shim, \{Kyu Hwan\} and Yang, \{Ha Yong\} and Kil, \{Yeon Ho\} and Yang, \{Hyeon Deok\} and Yang, \{Jong Han\} and Hong, \{Woong Ki\} and Sukill Kang and Jeong, \{Tae Soo\} and Kim, \{Taek Sung\}",

year = "2012",

month = aug,

doi = "10.1007/s13391-012-1109-z",

language = "English",

volume = "8",

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journal = "Electronic Materials Letters",

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T1 - Nanoscale dry etching of germanium by using inductively coupled CF 4 plasma

AU - Shim, Kyu Hwan

AU - Yang, Ha Yong

AU - Kil, Yeon Ho

AU - Yang, Hyeon Deok

AU - Yang, Jong Han

AU - Hong, Woong Ki

AU - Kang, Sukill

AU - Jeong, Tae Soo

AU - Kim, Taek Sung

PY - 2012/8

Y1 - 2012/8

N2 - The nanoscale dry etching of germanium was investigated by using inductively coupled CF 4 plasma and electron-beam lithography. The optimal dose of PMMA as E-beam lithography resist was ~200 mC/cm 2. When ICP Power was 200W, CF 4 gas flow rate was 40 sccm, and process pressure was 20 mTorr, it had a smooth surface and good etch rate. The etching selectivity of Ge wafer to PMMA resist was as low as ~1. 5. Various sub-100 nm dry-etching patterns have been obtained. SEM pictures showed good profile qualities with a smooth etching sidewall and ultrasmall etching features.

AB - The nanoscale dry etching of germanium was investigated by using inductively coupled CF 4 plasma and electron-beam lithography. The optimal dose of PMMA as E-beam lithography resist was ~200 mC/cm 2. When ICP Power was 200W, CF 4 gas flow rate was 40 sccm, and process pressure was 20 mTorr, it had a smooth surface and good etch rate. The etching selectivity of Ge wafer to PMMA resist was as low as ~1. 5. Various sub-100 nm dry-etching patterns have been obtained. SEM pictures showed good profile qualities with a smooth etching sidewall and ultrasmall etching features.

KW - etching

KW - Ge

KW - ICP

KW - nanoscale

KW - plasma

UR - https://www.scopus.com/pages/publications/84865831583

U2 - 10.1007/s13391-012-1109-z

DO - 10.1007/s13391-012-1109-z

M3 - Journal article

AN - SCOPUS:84865831583

SN - 1738-8090

VL - 8

SP - 423

EP - 428

JO - Electronic Materials Letters

JF - Electronic Materials Letters

IS - 4

ER -