Nanoscale resistive switching of a copper-carbon-mixed layer for nonvolatile memory applications

Hyejung Choi; Myeongbum Pyun; Tae Wook Kim; Musarrat Hasan; Rui Dong; Joonmyoung Lee; Ju Bong Park; Jaesik Yoon; Dong Jun Seong; Takhee Lee; Hyunsang Hwang

doi:10.1109/LED.2008.2012273

Nanoscale resistive switching of a copper-carbon-mixed layer for nonvolatile memory applications

Hyejung Choi^*
, Myeongbum Pyun
, Tae Wook Kim
, Musarrat Hasan
, Rui Dong
, Joonmyoung Lee
, Ju Bong Park
, Jaesik Yoon
, Dong Jun Seong
, Takhee Lee
, Hyunsang Hwang

^*Corresponding author for this work

Department of Flexible and Printable Electronics

Gwangju Institute of Science and Technology

Research output: Contribution to journal › Journal article › peer-review

36 Scopus citations

Abstract

The nanoscale resistance switching property of copper-carbon-mixed (Cu-C) layer was investigated for nonvolatile memory applications. The Cu-C layer of the cross-point cell array showed typical filament switching with two orders of on/off ratio, exhibiting stable resistance switching and a narrow distribution of set and reset voltages in the nanoscale junction. In addition, we investigated the area dependence of operation current. Based on these results and current-voltage dependence on temperature, we discussed a potential switching mechanism of Cu-C layer.

Original language	English
Pages (from-to)	302-304
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	3
DOIs	https://doi.org/10.1109/LED.2008.2012273
State	Published - 2009

Keywords

Cell array
Copper-carbon-mixed (Cu-C) layer
Resistance random access memory
Resistive switching

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10.1109/LED.2008.2012273

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@article{b467843768b04592a44dba8bee8fb3ec,

title = "Nanoscale resistive switching of a copper-carbon-mixed layer for nonvolatile memory applications",

abstract = "The nanoscale resistance switching property of copper-carbon-mixed (Cu-C) layer was investigated for nonvolatile memory applications. The Cu-C layer of the cross-point cell array showed typical filament switching with two orders of on/off ratio, exhibiting stable resistance switching and a narrow distribution of set and reset voltages in the nanoscale junction. In addition, we investigated the area dependence of operation current. Based on these results and current-voltage dependence on temperature, we discussed a potential switching mechanism of Cu-C layer.",

keywords = "Cell array, Copper-carbon-mixed (Cu-C) layer, Resistance random access memory, Resistive switching",

author = "Hyejung Choi and Myeongbum Pyun and Kim, \{Tae Wook\} and Musarrat Hasan and Rui Dong and Joonmyoung Lee and Park, \{Ju Bong\} and Jaesik Yoon and Seong, \{Dong Jun\} and Takhee Lee and Hyunsang Hwang",

year = "2009",

doi = "10.1109/LED.2008.2012273",

language = "English",

volume = "30",

pages = "302--304",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

number = "3",

}

TY - JOUR

T1 - Nanoscale resistive switching of a copper-carbon-mixed layer for nonvolatile memory applications

AU - Choi, Hyejung

AU - Pyun, Myeongbum

AU - Kim, Tae Wook

AU - Hasan, Musarrat

AU - Dong, Rui

AU - Lee, Joonmyoung

AU - Park, Ju Bong

AU - Yoon, Jaesik

AU - Seong, Dong Jun

AU - Lee, Takhee

AU - Hwang, Hyunsang

PY - 2009

Y1 - 2009

N2 - The nanoscale resistance switching property of copper-carbon-mixed (Cu-C) layer was investigated for nonvolatile memory applications. The Cu-C layer of the cross-point cell array showed typical filament switching with two orders of on/off ratio, exhibiting stable resistance switching and a narrow distribution of set and reset voltages in the nanoscale junction. In addition, we investigated the area dependence of operation current. Based on these results and current-voltage dependence on temperature, we discussed a potential switching mechanism of Cu-C layer.

AB - The nanoscale resistance switching property of copper-carbon-mixed (Cu-C) layer was investigated for nonvolatile memory applications. The Cu-C layer of the cross-point cell array showed typical filament switching with two orders of on/off ratio, exhibiting stable resistance switching and a narrow distribution of set and reset voltages in the nanoscale junction. In addition, we investigated the area dependence of operation current. Based on these results and current-voltage dependence on temperature, we discussed a potential switching mechanism of Cu-C layer.

KW - Cell array

KW - Copper-carbon-mixed (Cu-C) layer

KW - Resistance random access memory

KW - Resistive switching

UR - https://www.scopus.com/pages/publications/62549105712

U2 - 10.1109/LED.2008.2012273

DO - 10.1109/LED.2008.2012273

M3 - Journal article

AN - SCOPUS:62549105712

SN - 0741-3106

VL - 30

SP - 302

EP - 304

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 3

ER -

Nanoscale resistive switching of a copper-carbon-mixed layer for nonvolatile memory applications

Abstract

Keywords

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