TY - GEN
T1 - Nanoscale silicon ion-sensitive field-effect transistors for pH sensor and biosensor applications
AU - Lee, Jeong Soo
AU - Kim, Sungho
AU - Kim, Kihyun
AU - Rim, Taiuk
AU - Jeong, Yoon Ha
AU - Meyyappan, M.
PY - 2011
Y1 - 2011
N2 - Introduction: Increased demand for point-of-care diagnostics has provided a strong motivation for the development of lab-on-a chip systems. The most important part to develop the system is to realize sensing components with high sensitivity, high reliability, low power consumption, low noise and small size in a cost-effective way. The Si-nanowire (Si-NW) ion-sensitive field effect transistor (ISFET) has been considered as one of the most promising devices because of the well-established fabrication techniques taking advantage of the low-cost wafer-scale top down methods [1-2]. In this work, the Si-NW ISFETs with embedded Ag/AgCI electrode have been demonstrated. The DC characteristics and the pH response of the Si-NW ISFET were measured and analysed. In addition, the low-frequency noise measurement was performed in order to investigate noise characteristics of the Si-NW ISFETs.
AB - Introduction: Increased demand for point-of-care diagnostics has provided a strong motivation for the development of lab-on-a chip systems. The most important part to develop the system is to realize sensing components with high sensitivity, high reliability, low power consumption, low noise and small size in a cost-effective way. The Si-nanowire (Si-NW) ion-sensitive field effect transistor (ISFET) has been considered as one of the most promising devices because of the well-established fabrication techniques taking advantage of the low-cost wafer-scale top down methods [1-2]. In this work, the Si-NW ISFETs with embedded Ag/AgCI electrode have been demonstrated. The DC characteristics and the pH response of the Si-NW ISFET were measured and analysed. In addition, the low-frequency noise measurement was performed in order to investigate noise characteristics of the Si-NW ISFETs.
UR - https://www.scopus.com/pages/publications/84862965490
U2 - 10.1109/EDSSC.2011.6117562
DO - 10.1109/EDSSC.2011.6117562
M3 - Conference paper
AN - SCOPUS:84862965490
SN - 9781457719974
T3 - 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011
BT - 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011
T2 - 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011
Y2 - 17 November 2011 through 18 November 2011
ER -