Nanostructures of Indium Gallium Nitride Crystals Grown on Carbon Nanotubes

Ji Yeon Park; Keun Man Song; Yo Sep Min; Chel Jong Choi; Yoon Seok Kim; Sung Nam Lee

doi:10.1038/srep16612

Nanostructures of Indium Gallium Nitride Crystals Grown on Carbon Nanotubes

Ji Yeon Park
, Keun Man Song
, Yo Sep Min
, Chel Jong Choi
, Yoon Seok Kim
, Sung Nam Lee^*

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Tech University of Korea
Korea Advanced Nano Fab Center
Konkuk University
Korea Photonics Technology Institute

Research output: Contribution to journal › Journal article › peer-review

3 Scopus citations

Abstract

Nanostructure (NS) InGaN crystals were grown on carbon nanotubes (CNTs) using metalorganic chemical vapor deposition. The NS-InGaN crystals, grown on a ∼5-μm-long CNT/Si template, were estimated to be ∼100-270nm in size. Transmission electron microscope examinations revealed that single-crystalline InGaN NSs were formed with different crystal facets. The observed green (∼500 nm) cathodoluminescence (CL) emission was consistent with the surface image of the NS-InGaN crystallites, indicating excellent optical properties of the InGaN NSs on CNTs. Moreover, the CL spectrum of InGaN NSs showed a broad emission band from 490 to 600nm. Based on these results, we believe that InGaN NSs grown on CNTs could aid in overcoming the green gap in LED technologies.

Original language	English
Article number	16612
Journal	Scientific Reports
Volume	5
DOIs	https://doi.org/10.1038/srep16612
State	Published - 2015.11.16

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10.1038/srep16612

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@article{f20351bec3a94a1295d20ef198dc7354,

title = "Nanostructures of Indium Gallium Nitride Crystals Grown on Carbon Nanotubes",

abstract = "Nanostructure (NS) InGaN crystals were grown on carbon nanotubes (CNTs) using metalorganic chemical vapor deposition. The NS-InGaN crystals, grown on a ∼5-μm-long CNT/Si template, were estimated to be ∼100-270nm in size. Transmission electron microscope examinations revealed that single-crystalline InGaN NSs were formed with different crystal facets. The observed green (∼500 nm) cathodoluminescence (CL) emission was consistent with the surface image of the NS-InGaN crystallites, indicating excellent optical properties of the InGaN NSs on CNTs. Moreover, the CL spectrum of InGaN NSs showed a broad emission band from 490 to 600nm. Based on these results, we believe that InGaN NSs grown on CNTs could aid in overcoming the green gap in LED technologies.",

author = "Park, \{Ji Yeon\} and \{Man Song\}, Keun and Min, \{Yo Sep\} and Choi, \{Chel Jong\} and \{Seok Kim\}, Yoon and Lee, \{Sung Nam\}",

year = "2015",

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doi = "10.1038/srep16612",

language = "English",

volume = "5",

journal = "Scientific Reports",

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T1 - Nanostructures of Indium Gallium Nitride Crystals Grown on Carbon Nanotubes

AU - Park, Ji Yeon

AU - Man Song, Keun

AU - Min, Yo Sep

AU - Choi, Chel Jong

AU - Seok Kim, Yoon

AU - Lee, Sung Nam

PY - 2015/11/16

Y1 - 2015/11/16

N2 - Nanostructure (NS) InGaN crystals were grown on carbon nanotubes (CNTs) using metalorganic chemical vapor deposition. The NS-InGaN crystals, grown on a ∼5-μm-long CNT/Si template, were estimated to be ∼100-270nm in size. Transmission electron microscope examinations revealed that single-crystalline InGaN NSs were formed with different crystal facets. The observed green (∼500 nm) cathodoluminescence (CL) emission was consistent with the surface image of the NS-InGaN crystallites, indicating excellent optical properties of the InGaN NSs on CNTs. Moreover, the CL spectrum of InGaN NSs showed a broad emission band from 490 to 600nm. Based on these results, we believe that InGaN NSs grown on CNTs could aid in overcoming the green gap in LED technologies.

AB - Nanostructure (NS) InGaN crystals were grown on carbon nanotubes (CNTs) using metalorganic chemical vapor deposition. The NS-InGaN crystals, grown on a ∼5-μm-long CNT/Si template, were estimated to be ∼100-270nm in size. Transmission electron microscope examinations revealed that single-crystalline InGaN NSs were formed with different crystal facets. The observed green (∼500 nm) cathodoluminescence (CL) emission was consistent with the surface image of the NS-InGaN crystallites, indicating excellent optical properties of the InGaN NSs on CNTs. Moreover, the CL spectrum of InGaN NSs showed a broad emission band from 490 to 600nm. Based on these results, we believe that InGaN NSs grown on CNTs could aid in overcoming the green gap in LED technologies.

UR - https://www.scopus.com/pages/publications/84947219048

U2 - 10.1038/srep16612

DO - 10.1038/srep16612

M3 - Journal article

AN - SCOPUS:84947219048

SN - 2045-2322

VL - 5

JO - Scientific Reports

JF - Scientific Reports

M1 - 16612

ER -

Nanostructures of Indium Gallium Nitride Crystals Grown on Carbon Nanotubes

Abstract

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