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New analysis on the interface trap states at schottky contact

  • Myungsim Jun*
  • , Moongyu Jang
  • , Yarkyeon Kim
  • , Cheljong Choi
  • , Taeyoub Kim
  • , Byungchul Park
  • , Seongjae Lee
  • *Corresponding author for this work
  • Electronics and Telecommunications Research Institute
  • Chungnam National University

Research output: Contribution to conferenceConference paperpeer-review

Abstract

We present a simple equivalent circuit model that represents the charging dynamics of the interface states of Schottky diodes in the reverse bias condition. The interface trap states of an erbium-silicided Schottky diode are investigated from AC admittance measurement. The trap densities and the capture and emission transition times are extracted by using the equivalent circuit model.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
Pages121-122
Number of pages2
DOIs
StatePublished - 2007
Event28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria
Duration: 2006.07.242006.07.28

Publication series

NameAIP Conference Proceedings
Volume893
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference28th International Conference on the Physics of Semiconductors, ICPS 2006
Country/TerritoryAustria
CityVienna
Period06.07.2406.07.28

Keywords

  • Equivalent circuit modeling
  • Schottky diodes
  • Semiconductor-metal interfaces

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