New and effective anti reflection coating of SiC-SiO2 nanocomposite for p-type silicon solar cell

Azmira Jannat; Woojin Lee; M. Shaheer Akhtar; Zhen Yu Li; O. Bong Yang

doi:10.1109/PVSC.2015.7356325

New and effective anti reflection coating of SiC-SiO2 nanocomposite for p-type silicon solar cell

Azmira Jannat
, Woojin Lee
, M. Shaheer Akhtar
, Zhen Yu Li
, O. Bong Yang

Jeonbuk National University

Research output: Contribution to conference › Conference paper › peer-review

2 Scopus citations

Abstract

This work demonstrated the preparation of new and effective antireflection SiC-SiO2 nanocomposite by sol-gel process for Si solar cells. The AR coating was conducted in two steps: i) sol-gel derived precursor was coated on p-type Si wafer by spin coating, and ii) the coated wafer was subjected to annealing at 450°C for 1h. The reflectance analysis revealed that SiC-SiO2 layers presented the relatively low reflectance (7.08%) in wavelengths ranging from 400 to 1000 nm. The fabricated Si solar cell with SiC-SiO2 AR attained very comparable energy conversion efficiency of 16.99% to the Si solar cells with SiNx AR.

Original language	English
Title of host publication	2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479979448
DOIs	https://doi.org/10.1109/PVSC.2015.7356325
State	Published - 2015.12.14
Event	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: 2015.06.14 → 2015.06.19

Publication series

Name	2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

Conference

Conference	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/Territory	United States
City	New Orleans
Period	15.06.14 → 15.06.19

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Engineering - Electrical & Electronic
Engineering - Petroleum

Access to Document

10.1109/PVSC.2015.7356325

Cite this

Jannat, A., Lee, W., Akhtar, M. S., Li, Z. Y., & Yang, O. B. (2015). New and effective anti reflection coating of SiC-SiO2 nanocomposite for p-type silicon solar cell. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 Article 7356325 (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2015.7356325

@inproceedings{4a927f0433fc4be298eb7226d81de128,

title = "New and effective anti reflection coating of SiC-SiO2 nanocomposite for p-type silicon solar cell",

abstract = "This work demonstrated the preparation of new and effective antireflection SiC-SiO2 nanocomposite by sol-gel process for Si solar cells. The AR coating was conducted in two steps: i) sol-gel derived precursor was coated on p-type Si wafer by spin coating, and ii) the coated wafer was subjected to annealing at 450°C for 1h. The reflectance analysis revealed that SiC-SiO2 layers presented the relatively low reflectance (7.08\%) in wavelengths ranging from 400 to 1000 nm. The fabricated Si solar cell with SiC-SiO2 AR attained very comparable energy conversion efficiency of 16.99\% to the Si solar cells with SiNx AR.",

author = "Azmira Jannat and Woojin Lee and Akhtar, \{M. Shaheer\} and Li, \{Zhen Yu\} and Yang, \{O. Bong\}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 ; Conference date: 14-06-2015 Through 19-06-2015",

year = "2015",

month = dec,

day = "14",

doi = "10.1109/PVSC.2015.7356325",

language = "English",

series = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",

}

Jannat, A, Lee, W, Akhtar, MS, Li, ZY & Yang, OB 2015, New and effective anti reflection coating of SiC-SiO2 nanocomposite for p-type silicon solar cell. in 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015., 7356325, 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015, Institute of Electrical and Electronics Engineers Inc., 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015, New Orleans, United States, 15.06.14. https://doi.org/10.1109/PVSC.2015.7356325

New and effective anti reflection coating of SiC-SiO2 nanocomposite for p-type silicon solar cell. / Jannat, Azmira; Lee, Woojin; Akhtar, M. Shaheer et al.
2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7356325 (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015).

Research output: Contribution to conference › Conference paper › peer-review

TY - GEN

T1 - New and effective anti reflection coating of SiC-SiO2 nanocomposite for p-type silicon solar cell

AU - Jannat, Azmira

AU - Lee, Woojin

AU - Akhtar, M. Shaheer

AU - Li, Zhen Yu

AU - Yang, O. Bong

PY - 2015/12/14

Y1 - 2015/12/14

N2 - This work demonstrated the preparation of new and effective antireflection SiC-SiO2 nanocomposite by sol-gel process for Si solar cells. The AR coating was conducted in two steps: i) sol-gel derived precursor was coated on p-type Si wafer by spin coating, and ii) the coated wafer was subjected to annealing at 450°C for 1h. The reflectance analysis revealed that SiC-SiO2 layers presented the relatively low reflectance (7.08%) in wavelengths ranging from 400 to 1000 nm. The fabricated Si solar cell with SiC-SiO2 AR attained very comparable energy conversion efficiency of 16.99% to the Si solar cells with SiNx AR.

AB - This work demonstrated the preparation of new and effective antireflection SiC-SiO2 nanocomposite by sol-gel process for Si solar cells. The AR coating was conducted in two steps: i) sol-gel derived precursor was coated on p-type Si wafer by spin coating, and ii) the coated wafer was subjected to annealing at 450°C for 1h. The reflectance analysis revealed that SiC-SiO2 layers presented the relatively low reflectance (7.08%) in wavelengths ranging from 400 to 1000 nm. The fabricated Si solar cell with SiC-SiO2 AR attained very comparable energy conversion efficiency of 16.99% to the Si solar cells with SiNx AR.

UR - https://www.scopus.com/pages/publications/84961572603

U2 - 10.1109/PVSC.2015.7356325

DO - 10.1109/PVSC.2015.7356325

M3 - Conference paper

AN - SCOPUS:84961572603

T3 - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

BT - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015

Y2 - 14 June 2015 through 19 June 2015

ER -

Jannat A, Lee W, Akhtar MS, Li ZY, Yang OB. New and effective anti reflection coating of SiC-SiO2 nanocomposite for p-type silicon solar cell. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7356325. (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015). doi: 10.1109/PVSC.2015.7356325

New and effective anti reflection coating of SiC-SiO2 nanocomposite for p-type silicon solar cell

Abstract

Publication series

Conference

UN SDGs

Quacquarelli Symonds(QS) Subject Topics

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