New approach to the growth of SiOx nanowire bunch using Au catalyst and SiNx film on Si substrate

Nae Man Park; Hyun Kyu Park; Chel Jong Choi; Sang Woo Kim; Sunglyul Maeng

doi:10.1016/j.physe.2008.05.008

New approach to the growth of SiO_x nanowire bunch using Au catalyst and SiN_x film on Si substrate

Nae Man Park^*
, Hyun Kyu Park
, Chel Jong Choi
, Sang Woo Kim
, Sunglyul Maeng

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Electronics and Telecommunications Research Institute
Kumoh National Institute of Technology
Woosuk University

Research output: Contribution to journal › Journal article › peer-review

3 Scopus citations

Abstract

SiO_x nanowire bunches were fabricated on a SiN_x film with Au catalytic metal in the presence of an Ar flow of 50 sccm at 1150 °C. The resulting samples were characterized by field-emission scanning electron microscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. A SiN_x film serves as a barrier to the diffusion of Si atoms from the Si substrate to the catalytic Au metal, where a substrate is a Si source material for SiO_x nanowire (NW) growth. Using this process, we could temporally control the initial growth step of SiO_x NWs and easily grow the NW bunch.

Original language	English
Pages (from-to)	3170-3172
Number of pages	3
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	40
Issue number	10
DOIs	https://doi.org/10.1016/j.physe.2008.05.008
State	Published - 2008.09

Keywords

Amorphous Si nanowire
Thermal chemical vapor deposition
Transmission electron microscopy

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Physics & Astronomy

Access to Document

10.1016/j.physe.2008.05.008

Cite this

@article{4c5b8d45848747eb839d01e882737f59,

title = "New approach to the growth of SiOx nanowire bunch using Au catalyst and SiNx film on Si substrate",

abstract = "SiOx nanowire bunches were fabricated on a SiNx film with Au catalytic metal in the presence of an Ar flow of 50 sccm at 1150 °C. The resulting samples were characterized by field-emission scanning electron microscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. A SiNx film serves as a barrier to the diffusion of Si atoms from the Si substrate to the catalytic Au metal, where a substrate is a Si source material for SiOx nanowire (NW) growth. Using this process, we could temporally control the initial growth step of SiOx NWs and easily grow the NW bunch.",

keywords = "Amorphous Si nanowire, Thermal chemical vapor deposition, Transmission electron microscopy",

author = "Park, \{Nae Man\} and Park, \{Hyun Kyu\} and Choi, \{Chel Jong\} and Kim, \{Sang Woo\} and Sunglyul Maeng",

year = "2008",

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doi = "10.1016/j.physe.2008.05.008",

language = "English",

volume = "40",

pages = "3170--3172",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

number = "10",

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T1 - New approach to the growth of SiOx nanowire bunch using Au catalyst and SiNx film on Si substrate

AU - Park, Nae Man

AU - Park, Hyun Kyu

AU - Choi, Chel Jong

AU - Kim, Sang Woo

AU - Maeng, Sunglyul

PY - 2008/9

Y1 - 2008/9

N2 - SiOx nanowire bunches were fabricated on a SiNx film with Au catalytic metal in the presence of an Ar flow of 50 sccm at 1150 °C. The resulting samples were characterized by field-emission scanning electron microscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. A SiNx film serves as a barrier to the diffusion of Si atoms from the Si substrate to the catalytic Au metal, where a substrate is a Si source material for SiOx nanowire (NW) growth. Using this process, we could temporally control the initial growth step of SiOx NWs and easily grow the NW bunch.

AB - SiOx nanowire bunches were fabricated on a SiNx film with Au catalytic metal in the presence of an Ar flow of 50 sccm at 1150 °C. The resulting samples were characterized by field-emission scanning electron microscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. A SiNx film serves as a barrier to the diffusion of Si atoms from the Si substrate to the catalytic Au metal, where a substrate is a Si source material for SiOx nanowire (NW) growth. Using this process, we could temporally control the initial growth step of SiOx NWs and easily grow the NW bunch.

KW - Amorphous Si nanowire

KW - Thermal chemical vapor deposition

KW - Transmission electron microscopy

UR - https://www.scopus.com/pages/publications/50249121884

U2 - 10.1016/j.physe.2008.05.008

DO - 10.1016/j.physe.2008.05.008

M3 - Journal article

AN - SCOPUS:50249121884

SN - 1386-9477

VL - 40

SP - 3170

EP - 3172

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 10

ER -