Next-Generation Variable Capacitors to Reduce Capacitance Variable Time Using SiC MOSFETs and PIN Diodes in 13.56MHz RF Plasma Systems

Research output: Contribution to journal › Journal article › peer-review

Original language	Korean
Journal	IEEE Journal of Emerging and Selected Topics in Power Electronics
State	Published - 2022.04.1

Cite this

@article{657dd46579ab476aa2739a7e2f988715,

title = "Next-Generation Variable Capacitors to Reduce Capacitance Variable Time Using SiC MOSFETs and PIN Diodes in 13.56MHz RF Plasma Systems",

author = "Yongsug Suh",

year = "2022",

month = apr,

day = "1",

language = "Korean",

journal = "IEEE Journal of Emerging and Selected Topics in Power Electronics",

issn = "2168-6777",

}

TY - JOUR

T1 - Next-Generation Variable Capacitors to Reduce Capacitance Variable Time Using SiC MOSFETs and PIN Diodes in 13.56MHz RF Plasma Systems

AU - Suh, Yongsug

PY - 2022/4/1

Y1 - 2022/4/1

M3 - Journal article

SN - 2168-6777

JO - IEEE Journal of Emerging and Selected Topics in Power Electronics

JF - IEEE Journal of Emerging and Selected Topics in Power Electronics

ER -