Ni implantation-induced enhancement of the crystallisation of amorphous Si

Young Woo Ok; Tae Yeon Seong; Chel Jong Choi; K. N. Tu

doi:10.1007/s10854-006-9035-1

Ni implantation-induced enhancement of the crystallisation of amorphous Si

Young Woo Ok
, Tae Yeon Seong^*
, Chel Jong Choi
, K. N. Tu

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Korea University
Electronics and Telecommunications Research Institute
University of California at Los Angeles

Research output: Contribution to journal › Journal article › peer-review

2 Scopus citations

Abstract

We report on the effect of Ni implantation on the crystallisation process of amorphous Si formed by ion implantation during excimer laser annealing. Scanning transmission electron microscopy and X-ray photoemission spectroscopy results show that NiSi₂ precipitates are formed in the Si-Ni-implanted samples. It is shown that the Ni implantation results in the enhanced crystallisation of amorphous Si during laser annealing. The Si-Ni-implanted samples become epitaxial to the Si substrate at 600 mJ/cm², while the Si-implanted samples produce epitaxial relationship at 800 mJ/cm². Possible mechanisms by which implanted Ni atoms play a role are given to describe the enhanced crystallisation process of amorphous Si.

Original language	English
Pages (from-to)	979-985
Number of pages	7
Journal	Journal of Materials Science: Materials in Electronics
Volume	17
Issue number	12
DOIs	https://doi.org/10.1007/s10854-006-9035-1
State	Published - 2006.12

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@article{9b3c8f77d4814f5c9240a79b87256412,

title = "Ni implantation-induced enhancement of the crystallisation of amorphous Si",

abstract = "We report on the effect of Ni implantation on the crystallisation process of amorphous Si formed by ion implantation during excimer laser annealing. Scanning transmission electron microscopy and X-ray photoemission spectroscopy results show that NiSi2 precipitates are formed in the Si-Ni-implanted samples. It is shown that the Ni implantation results in the enhanced crystallisation of amorphous Si during laser annealing. The Si-Ni-implanted samples become epitaxial to the Si substrate at 600 mJ/cm2, while the Si-implanted samples produce epitaxial relationship at 800 mJ/cm2. Possible mechanisms by which implanted Ni atoms play a role are given to describe the enhanced crystallisation process of amorphous Si.",

author = "Ok, \{Young Woo\} and Seong, \{Tae Yeon\} and Choi, \{Chel Jong\} and Tu, \{K. N.\}",

year = "2006",

month = dec,

doi = "10.1007/s10854-006-9035-1",

language = "English",

volume = "17",

pages = "979--985",

journal = "Journal of Materials Science: Materials in Electronics",

issn = "0957-4522",

number = "12",

}

TY - JOUR

T1 - Ni implantation-induced enhancement of the crystallisation of amorphous Si

AU - Ok, Young Woo

AU - Seong, Tae Yeon

AU - Choi, Chel Jong

AU - Tu, K. N.

PY - 2006/12

Y1 - 2006/12

N2 - We report on the effect of Ni implantation on the crystallisation process of amorphous Si formed by ion implantation during excimer laser annealing. Scanning transmission electron microscopy and X-ray photoemission spectroscopy results show that NiSi2 precipitates are formed in the Si-Ni-implanted samples. It is shown that the Ni implantation results in the enhanced crystallisation of amorphous Si during laser annealing. The Si-Ni-implanted samples become epitaxial to the Si substrate at 600 mJ/cm2, while the Si-implanted samples produce epitaxial relationship at 800 mJ/cm2. Possible mechanisms by which implanted Ni atoms play a role are given to describe the enhanced crystallisation process of amorphous Si.

AB - We report on the effect of Ni implantation on the crystallisation process of amorphous Si formed by ion implantation during excimer laser annealing. Scanning transmission electron microscopy and X-ray photoemission spectroscopy results show that NiSi2 precipitates are formed in the Si-Ni-implanted samples. It is shown that the Ni implantation results in the enhanced crystallisation of amorphous Si during laser annealing. The Si-Ni-implanted samples become epitaxial to the Si substrate at 600 mJ/cm2, while the Si-implanted samples produce epitaxial relationship at 800 mJ/cm2. Possible mechanisms by which implanted Ni atoms play a role are given to describe the enhanced crystallisation process of amorphous Si.

UR - https://www.scopus.com/pages/publications/33749389998

U2 - 10.1007/s10854-006-9035-1

DO - 10.1007/s10854-006-9035-1

M3 - Journal article

AN - SCOPUS:33749389998

SN - 0957-4522

VL - 17

SP - 979

EP - 985

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 12

ER -

Ni implantation-induced enhancement of the crystallisation of amorphous Si

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