Nickel-based germanosilicide of heavily-doped SiGe films for low resistance and high-temperature stability

A. Ram Choi; Sang Sik Choi; Jung Hyun Kim; Sang Hoon Kim; Kyu Hwan Shim

doi:10.4028/3-908451-31-0.279

Nickel-based germanosilicide of heavily-doped SiGe films for low resistance and high-temperature stability

A. Ram Choi
, Sang Sik Choi
, Jung Hyun Kim
, Sang Hoon Kim
, Kyu Hwan Shim^*

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Research output: Contribution to conference › Conference paper › peer-review

Abstract

We have studied thermo-electrical properties for Ni-based germanosilicide to understand the influence of temperature on the evolution of sheet resistance and micro-structures of contacts on heavily-doped SiGe grown by reduced pressure chemical vapor deposition. After the deposition of Ni, Ni/Ti, Ni/Pt films on Si_0.83Ge_0.17 epi layer and subsequently annealing for suicide reaction, we analyzed sheet resistance, surface roughness and reaction interfaces using four point probe method, scanning probe micrograph and transmission electron microscope. Bi-layer metal structures of Ni/Ti and Ni/Pt were investigated to study feasible use for suppressing inappropriate reaction at interface. It is found that bi-layer structure with thin Pt interlayer presented promising properties for germanosilicide of n⁺-Si _0.83Ge_0.17 with low sheet resistance, smooth surface morphology and high temperature stability up to 800°C.

Original language	English
Title of host publication	Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia
Publisher	Trans Tech Publications Ltd
Pages	279-282
Number of pages	4
Edition	PART 1
ISBN (Print)	3908451310, 9783908451310
DOIs	https://doi.org/10.4028/3-908451-31-0.279
State	Published - 2007
Event	IUMRS International Conference in Asia 2006, IUMRS-ICA 2006 - Jeju, Korea, Republic of Duration: 2006.09.10 → 2006.09.14

Publication series

Name	Solid State Phenomena
Number	PART 1
Volume	124-126
ISSN (Print)	1012-0394

Conference

Conference	IUMRS International Conference in Asia 2006, IUMRS-ICA 2006
Country/Territory	Korea, Republic of
City	Jeju
Period	06.09.10 → 06.09.14

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 3 Good Health and Well-being

Keywords

Contact
Epitaxy
Germanosilicide
Nickel
Ohmic
SiGe
Silicide

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Physics & Astronomy

Access to Document

10.4028/3-908451-31-0.279

Cite this

Choi, A. R., Choi, S. S., Kim, J. H., Kim, S. H., & Shim, K. H. (2007). Nickel-based germanosilicide of heavily-doped SiGe films for low resistance and high-temperature stability. In Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia (PART 1 ed., pp. 279-282). (Solid State Phenomena; Vol. 124-126, No. PART 1). Trans Tech Publications Ltd. https://doi.org/10.4028/3-908451-31-0.279

@inproceedings{96a911615f9743dca959a479ec3888f6,

title = "Nickel-based germanosilicide of heavily-doped SiGe films for low resistance and high-temperature stability",

abstract = "We have studied thermo-electrical properties for Ni-based germanosilicide to understand the influence of temperature on the evolution of sheet resistance and micro-structures of contacts on heavily-doped SiGe grown by reduced pressure chemical vapor deposition. After the deposition of Ni, Ni/Ti, Ni/Pt films on Si0.83Ge0.17 epi layer and subsequently annealing for suicide reaction, we analyzed sheet resistance, surface roughness and reaction interfaces using four point probe method, scanning probe micrograph and transmission electron microscope. Bi-layer metal structures of Ni/Ti and Ni/Pt were investigated to study feasible use for suppressing inappropriate reaction at interface. It is found that bi-layer structure with thin Pt interlayer presented promising properties for germanosilicide of n+-Si 0.83Ge0.17 with low sheet resistance, smooth surface morphology and high temperature stability up to 800°C.",

keywords = "Contact, Epitaxy, Germanosilicide, Nickel, Ohmic, SiGe, Silicide",

author = "Choi, \{A. Ram\} and Choi, \{Sang Sik\} and Kim, \{Jung Hyun\} and Kim, \{Sang Hoon\} and Shim, \{Kyu Hwan\}",

year = "2007",

doi = "10.4028/3-908451-31-0.279",

language = "English",

isbn = "3908451310",

series = "Solid State Phenomena",

publisher = "Trans Tech Publications Ltd",

number = "PART 1",

pages = "279--282",

booktitle = "Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia",

edition = "PART 1",

note = "IUMRS International Conference in Asia 2006, IUMRS-ICA 2006 ; Conference date: 10-09-2006 Through 14-09-2006",

}

Choi, AR, Choi, SS, Kim, JH, Kim, SH & Shim, KH 2007, Nickel-based germanosilicide of heavily-doped SiGe films for low resistance and high-temperature stability. in Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia. PART 1 edn, Solid State Phenomena, no. PART 1, vol. 124-126, Trans Tech Publications Ltd, pp. 279-282, IUMRS International Conference in Asia 2006, IUMRS-ICA 2006, Jeju, Korea, Republic of, 06.09.10. https://doi.org/10.4028/3-908451-31-0.279

Nickel-based germanosilicide of heavily-doped SiGe films for low resistance and high-temperature stability. / Choi, A. Ram; Choi, Sang Sik; Kim, Jung Hyun et al.
Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia. PART 1. ed. Trans Tech Publications Ltd, 2007. p. 279-282 (Solid State Phenomena; Vol. 124-126, No. PART 1).

Research output: Contribution to conference › Conference paper › peer-review

TY - GEN

T1 - Nickel-based germanosilicide of heavily-doped SiGe films for low resistance and high-temperature stability

AU - Choi, A. Ram

AU - Choi, Sang Sik

AU - Kim, Jung Hyun

AU - Kim, Sang Hoon

AU - Shim, Kyu Hwan

PY - 2007

Y1 - 2007

N2 - We have studied thermo-electrical properties for Ni-based germanosilicide to understand the influence of temperature on the evolution of sheet resistance and micro-structures of contacts on heavily-doped SiGe grown by reduced pressure chemical vapor deposition. After the deposition of Ni, Ni/Ti, Ni/Pt films on Si0.83Ge0.17 epi layer and subsequently annealing for suicide reaction, we analyzed sheet resistance, surface roughness and reaction interfaces using four point probe method, scanning probe micrograph and transmission electron microscope. Bi-layer metal structures of Ni/Ti and Ni/Pt were investigated to study feasible use for suppressing inappropriate reaction at interface. It is found that bi-layer structure with thin Pt interlayer presented promising properties for germanosilicide of n+-Si 0.83Ge0.17 with low sheet resistance, smooth surface morphology and high temperature stability up to 800°C.

AB - We have studied thermo-electrical properties for Ni-based germanosilicide to understand the influence of temperature on the evolution of sheet resistance and micro-structures of contacts on heavily-doped SiGe grown by reduced pressure chemical vapor deposition. After the deposition of Ni, Ni/Ti, Ni/Pt films on Si0.83Ge0.17 epi layer and subsequently annealing for suicide reaction, we analyzed sheet resistance, surface roughness and reaction interfaces using four point probe method, scanning probe micrograph and transmission electron microscope. Bi-layer metal structures of Ni/Ti and Ni/Pt were investigated to study feasible use for suppressing inappropriate reaction at interface. It is found that bi-layer structure with thin Pt interlayer presented promising properties for germanosilicide of n+-Si 0.83Ge0.17 with low sheet resistance, smooth surface morphology and high temperature stability up to 800°C.

KW - Contact

KW - Epitaxy

KW - Germanosilicide

KW - Nickel

KW - Ohmic

KW - SiGe

KW - Silicide

UR - https://www.scopus.com/pages/publications/38549084859

U2 - 10.4028/3-908451-31-0.279

DO - 10.4028/3-908451-31-0.279

M3 - Conference paper

AN - SCOPUS:38549084859

SN - 3908451310

SN - 9783908451310

T3 - Solid State Phenomena

SP - 279

EP - 282

BT - Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia

PB - Trans Tech Publications Ltd

T2 - IUMRS International Conference in Asia 2006, IUMRS-ICA 2006

Y2 - 10 September 2006 through 14 September 2006

ER -

Choi AR, Choi SS, Kim JH, Kim SH, Shim KH. Nickel-based germanosilicide of heavily-doped SiGe films for low resistance and high-temperature stability. In Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia. PART 1 ed. Trans Tech Publications Ltd. 2007. p. 279-282. (Solid State Phenomena; PART 1). doi: 10.4028/3-908451-31-0.279

Nickel-based germanosilicide of heavily-doped SiGe films for low resistance and high-temperature stability

Abstract

Publication series

Conference

UN SDGs

Keywords

Quacquarelli Symonds(QS) Subject Topics

Access to Document

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