Nickel-silicidation process using hydrogen implantation

C. J. Choi; S. A. Song; Y. W. Ok; T. Y. Seong

doi:10.1049/el:20040251

Nickel-silicidation process using hydrogen implantation

C. J. Choi^*
, S. A. Song
, Y. W. Ok
, T. Y. Seong

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Samsung
Gwangju Institute of Science and Technology

Research output: Contribution to journal › Journal article › peer-review

5 Scopus citations

Abstract

The effect of hydrogen implantation on a nickel silicide process has been investigated. X-ray photoemission spectroscopy results show that the hydrogen implantation is effective in suppressing the oxidation of NiSi. It is further shown that the junction leakage current of the implanted samples is about one order of magnitude lower than that of the unimplanted ones.

Original language	English
Pages (from-to)	391-393
Number of pages	3
Journal	Electronics Letters
Volume	40
Issue number	6
DOIs	https://doi.org/10.1049/el:20040251
State	Published - 2004.03.18

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@article{7f117b80fd69498aaf32f1bde8ec6eec,

title = "Nickel-silicidation process using hydrogen implantation",

abstract = "The effect of hydrogen implantation on a nickel silicide process has been investigated. X-ray photoemission spectroscopy results show that the hydrogen implantation is effective in suppressing the oxidation of NiSi. It is further shown that the junction leakage current of the implanted samples is about one order of magnitude lower than that of the unimplanted ones.",

author = "Choi, \{C. J.\} and Song, \{S. A.\} and Ok, \{Y. W.\} and Seong, \{T. Y.\}",

year = "2004",

month = mar,

day = "18",

doi = "10.1049/el:20040251",

language = "English",

volume = "40",

pages = "391--393",

journal = "Electronics Letters",

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TY - JOUR

T1 - Nickel-silicidation process using hydrogen implantation

AU - Choi, C. J.

AU - Song, S. A.

AU - Ok, Y. W.

AU - Seong, T. Y.

PY - 2004/3/18

Y1 - 2004/3/18

N2 - The effect of hydrogen implantation on a nickel silicide process has been investigated. X-ray photoemission spectroscopy results show that the hydrogen implantation is effective in suppressing the oxidation of NiSi. It is further shown that the junction leakage current of the implanted samples is about one order of magnitude lower than that of the unimplanted ones.

AB - The effect of hydrogen implantation on a nickel silicide process has been investigated. X-ray photoemission spectroscopy results show that the hydrogen implantation is effective in suppressing the oxidation of NiSi. It is further shown that the junction leakage current of the implanted samples is about one order of magnitude lower than that of the unimplanted ones.

UR - https://www.scopus.com/pages/publications/1842843742

U2 - 10.1049/el:20040251

DO - 10.1049/el:20040251

M3 - Journal article

AN - SCOPUS:1842843742

SN - 0013-5194

VL - 40

SP - 391

EP - 393

JO - Electronics Letters

JF - Electronics Letters

IS - 6

ER -

Nickel-silicidation process using hydrogen implantation

Abstract

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