Non-linear kinetic analysis on GaAs selective area MOVPE combined with macro-scale analysis to extract major reaction mechanism

Numerical simulation on growth rate non-uniformity of selective area growth (SAG) in sub-millimeter scale can extract real surface kinetics in metal organic vapor phase epitaxy (MOVPE) process, which is normally hindered by mass transport rate of film precursors. SAG analysis with non-linear surface kinetics is introduced for the first time to analyze group-III precursor partial pressure dependency of GaAs-MOVPE. Important kinetic parameters, surface reaction rate constant, adsorption equilibrium constant and surface coverage, have been extracted and examined as various substrate misorientation angles. Such non-linear kinetic analysis using SAG (micro analysis) is combined with computational fluid dynamics (CFD) reactor-scale analysis (macro analysis) to elucidate the main reaction mechanism of GaAs-MOVPE process in the whole reactor. The reaction mechanism is different in different parts of the reactor. That means, we should use various kinetic parameters to preciously predict the growth procedure in the whole large-scale reactor.