Abstract
When plotting the anomalous Hall coefficient (Rs) and longitudinal resistivty (ρxx) for a series of annealed Ga1-xMnxAs epilayers (x≈0.055), we find the value of the scaling parameter n, from RS=cρxxn, to range from one, as-grown, to two at an optimal annealing temperature to values greater than three for higher annealing temperatures, similar behavior to certain inhomogeneous systems. This scaling relationship can be a new method to detect secondary phases in ferromagnetic semiconductor systems.
| Original language | English |
|---|---|
| Pages (from-to) | 2129-2131 |
| Number of pages | 3 |
| Journal | Journal of Magnetism and Magnetic Materials |
| Volume | 310 |
| Issue number | 2 SUPPL. PART 3 |
| DOIs | |
| State | Published - 2007.03 |
Keywords
- Anomalous Hall coefficient
- Anomalous Hall effect
- Diluted magnetic semiconductors
- GaMnAs
- Scaling parameter
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