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Non-monotonic dependence of the anomalous Hall coefficient scaling parameter in annealed Ga1-xMnxAs epifilms

  • H. K. Choi
  • , W. O. Lee
  • , Y. S. Oh
  • , K. H. Kim
  • , Y. D. Park*
  • *Corresponding author for this work
  • Seoul National University

Research output: Contribution to journalJournal articlepeer-review

Abstract

When plotting the anomalous Hall coefficient (Rs) and longitudinal resistivty (ρxx) for a series of annealed Ga1-xMnxAs epilayers (x≈0.055), we find the value of the scaling parameter n, from RS=cρxxn, to range from one, as-grown, to two at an optimal annealing temperature to values greater than three for higher annealing temperatures, similar behavior to certain inhomogeneous systems. This scaling relationship can be a new method to detect secondary phases in ferromagnetic semiconductor systems.

Original languageEnglish
Pages (from-to)2129-2131
Number of pages3
JournalJournal of Magnetism and Magnetic Materials
Volume310
Issue number2 SUPPL. PART 3
DOIs
StatePublished - 2007.03

Keywords

  • Anomalous Hall coefficient
  • Anomalous Hall effect
  • Diluted magnetic semiconductors
  • GaMnAs
  • Scaling parameter

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