Nonferroelectric epitaxial Sr-Bi-Ta oxide thin film with a high dielectric constant

S. J. Hyun; B. H. Park; S. D. Bu; J. H. Jung; T. W. Noh

doi:10.1063/1.122501

Nonferroelectric epitaxial Sr-Bi-Ta oxide thin film with a high dielectric constant

S. J. Hyun^*
, B. H. Park
, S. D. Bu
, J. H. Jung
, T. W. Noh

^*Corresponding author for this work

Department of Physics

Seoul National University
LG Corporation

Research output: Contribution to journal › Journal article › peer-review

33 Scopus citations

Abstract

Two kinds of epitaxial Sr-Bi-Ta oxides were grown on La_0.5Sr_0.5CoO₃(001)/LaAlO₃(001) substrates by pulsed laser deposition. At a temperature higher than 650°C, c-axis oriented SrBi₂Ta₂O₉ films could be deposited epitaxially. At 550°C, an epitaxial film with a cubic fluorite-like phase could be grown. Although the film with the cubic phase does not show ferroelectric properties, it has good electrical properties which are suitable for high capacitance applications.

Original language	English
Pages (from-to)	2518-2520
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	17
DOIs	https://doi.org/10.1063/1.122501
State	Published - 1998

Access to Document

10.1063/1.122501

Cite this

@article{3a7f6af6f7b344cb97f49e073a095ec5,

title = "Nonferroelectric epitaxial Sr-Bi-Ta oxide thin film with a high dielectric constant",

abstract = "Two kinds of epitaxial Sr-Bi-Ta oxides were grown on La0.5Sr0.5CoO3(001)/LaAlO3(001) substrates by pulsed laser deposition. At a temperature higher than 650°C, c-axis oriented SrBi2Ta2O9 films could be deposited epitaxially. At 550°C, an epitaxial film with a cubic fluorite-like phase could be grown. Although the film with the cubic phase does not show ferroelectric properties, it has good electrical properties which are suitable for high capacitance applications.",

author = "Hyun, \{S. J.\} and Park, \{B. H.\} and Bu, \{S. D.\} and Jung, \{J. H.\} and Noh, \{T. W.\}",

year = "1998",

doi = "10.1063/1.122501",

language = "English",

volume = "73",

pages = "2518--2520",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "17",

}

TY - JOUR

T1 - Nonferroelectric epitaxial Sr-Bi-Ta oxide thin film with a high dielectric constant

AU - Hyun, S. J.

AU - Park, B. H.

AU - Bu, S. D.

AU - Jung, J. H.

AU - Noh, T. W.

PY - 1998

Y1 - 1998

N2 - Two kinds of epitaxial Sr-Bi-Ta oxides were grown on La0.5Sr0.5CoO3(001)/LaAlO3(001) substrates by pulsed laser deposition. At a temperature higher than 650°C, c-axis oriented SrBi2Ta2O9 films could be deposited epitaxially. At 550°C, an epitaxial film with a cubic fluorite-like phase could be grown. Although the film with the cubic phase does not show ferroelectric properties, it has good electrical properties which are suitable for high capacitance applications.

AB - Two kinds of epitaxial Sr-Bi-Ta oxides were grown on La0.5Sr0.5CoO3(001)/LaAlO3(001) substrates by pulsed laser deposition. At a temperature higher than 650°C, c-axis oriented SrBi2Ta2O9 films could be deposited epitaxially. At 550°C, an epitaxial film with a cubic fluorite-like phase could be grown. Although the film with the cubic phase does not show ferroelectric properties, it has good electrical properties which are suitable for high capacitance applications.

UR - https://www.scopus.com/pages/publications/0007319911

U2 - 10.1063/1.122501

DO - 10.1063/1.122501

M3 - Journal article

AN - SCOPUS:0007319911

SN - 0003-6951

VL - 73

SP - 2518

EP - 2520

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

ER -

Nonferroelectric epitaxial Sr-Bi-Ta oxide thin film with a high dielectric constant

Abstract

Access to Document

Other files and links

Fingerprint

Cite this