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Nonvolatile write-once-read-many times memory devices based on the composites of poly(4-vinylphenol)/Vulcan XC-72

  • Sunghoon Song
  • , Tae Wook Kim
  • , Byungjin Cho
  • , Yongsung Ji
  • , Takhee Lee*
  • *Corresponding author for this work
  • Gwangju Institute of Science and Technology
  • University of Washington

Research output: Contribution to journalJournal articlepeer-review

Abstract

We fabricated write-once-read-many times (WORM) type organic memory devices in 8×8 cross-bar structure. The active material for organic based WORM memory devices is mixture of both poly(4-vinyphenol) (PVP) and Vulcan XC-72s. From the electrical characteristics of the WORM memory devices, we observed two different resistance states, low resistance state and high resistance state, with six orders of ON/OFF ratio (/ ON// OFF ∼ 10 6). In addition, the WORM memory devices were maintained for longer than 50000 seconds without any serious degradation.

Original languageEnglish
Pages (from-to)4492-4495
Number of pages4
JournalJournal of nanoscience and nanotechnology
Volume11
Issue number5
DOIs
StatePublished - 2011.05

Keywords

  • Cross-bar architecture
  • Organic electronics
  • Write-once-read-many memory

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