Abstract
We fabricated write-once-read-many times (WORM) type organic memory devices in 8×8 cross-bar structure. The active material for organic based WORM memory devices is mixture of both poly(4-vinyphenol) (PVP) and Vulcan XC-72s. From the electrical characteristics of the WORM memory devices, we observed two different resistance states, low resistance state and high resistance state, with six orders of ON/OFF ratio (/ ON// OFF ∼ 10 6). In addition, the WORM memory devices were maintained for longer than 50000 seconds without any serious degradation.
| Original language | English |
|---|---|
| Pages (from-to) | 4492-4495 |
| Number of pages | 4 |
| Journal | Journal of nanoscience and nanotechnology |
| Volume | 11 |
| Issue number | 5 |
| DOIs | |
| State | Published - 2011.05 |
Keywords
- Cross-bar architecture
- Organic electronics
- Write-once-read-many memory
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